KR960012636B1 - Method for fabricating the bonding pad of a semiconductor element - Google Patents

Method for fabricating the bonding pad of a semiconductor element Download PDF

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Publication number
KR960012636B1
KR960012636B1 KR93021060A KR930021060A KR960012636B1 KR 960012636 B1 KR960012636 B1 KR 960012636B1 KR 93021060 A KR93021060 A KR 93021060A KR 930021060 A KR930021060 A KR 930021060A KR 960012636 B1 KR960012636 B1 KR 960012636B1
Authority
KR
South Korea
Prior art keywords
film
metal film
bonding pad
fabricating
semiconductor element
Prior art date
Application number
KR93021060A
Other languages
Korean (ko)
Other versions
KR950012654A (en
Inventor
Sang-Hoon Park
Ho-Ki Jung
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR93021060A priority Critical patent/KR960012636B1/en
Publication of KR950012654A publication Critical patent/KR950012654A/en
Application granted granted Critical
Publication of KR960012636B1 publication Critical patent/KR960012636B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

exposing an surface of metal film by etching a nitrogenous film using dry etching method after a Al-group metal film for bonding pad was formed on an insulating film(2) and a plasma auxiliary nitrogenous film(4) was evaporated; removing a photoresist film(5) using O2 plasma etching process, here, a moving thickness is 500-1000=G10-10m; evaporating a transition metal film(6); forming only a transition metal film(6) on an upper layer of Al-group metal film(3) for the boding pad.
KR93021060A 1993-10-12 1993-10-12 Method for fabricating the bonding pad of a semiconductor element KR960012636B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93021060A KR960012636B1 (en) 1993-10-12 1993-10-12 Method for fabricating the bonding pad of a semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93021060A KR960012636B1 (en) 1993-10-12 1993-10-12 Method for fabricating the bonding pad of a semiconductor element

Publications (2)

Publication Number Publication Date
KR950012654A KR950012654A (en) 1995-05-16
KR960012636B1 true KR960012636B1 (en) 1996-09-23

Family

ID=19365643

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93021060A KR960012636B1 (en) 1993-10-12 1993-10-12 Method for fabricating the bonding pad of a semiconductor element

Country Status (1)

Country Link
KR (1) KR960012636B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100854209B1 (en) * 2006-12-26 2008-08-26 동부일렉트로닉스 주식회사 Method of fabricating semiconductor devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2152620A4 (en) 2007-05-21 2013-03-06 Wind Hill Concepts Llc Apparatus and method for processing sheets

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100854209B1 (en) * 2006-12-26 2008-08-26 동부일렉트로닉스 주식회사 Method of fabricating semiconductor devices

Also Published As

Publication number Publication date
KR950012654A (en) 1995-05-16

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