JPS57141641A - Formation of positive pattern - Google Patents

Formation of positive pattern

Info

Publication number
JPS57141641A
JPS57141641A JP56027481A JP2748181A JPS57141641A JP S57141641 A JPS57141641 A JP S57141641A JP 56027481 A JP56027481 A JP 56027481A JP 2748181 A JP2748181 A JP 2748181A JP S57141641 A JPS57141641 A JP S57141641A
Authority
JP
Japan
Prior art keywords
layer
resist
etching
worked
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56027481A
Other languages
Japanese (ja)
Other versions
JPS6364771B2 (en
Inventor
Yasuhiro Yoneda
Tateo Kitamura
Jiro Naito
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56027481A priority Critical patent/JPS57141641A/en
Publication of JPS57141641A publication Critical patent/JPS57141641A/en
Publication of JPS6364771B2 publication Critical patent/JPS6364771B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To easily dry etch a layer to be worked by using a resist prepared by mixing a positive type resist material with a specified polysilsesquioxane. CONSTITUTION:A substrate 1 having a formed layer 2 of SiO2 or the like to be worked is successively coated with the 1st resist layer 3 of polystyrene or the like with high etching resistance and the 2nd resist layer 4 having 0.3-0.7mum thickness and consisting of a positive type resist and a polysilsesquioxane represented by the formula ( where n is the degree of polymn; R1 is H, phenyl, 1-4C alkyl or CN; and R2 is phenyl, 1-4C alkyl or CN). The layer 4 is exposed to energy beams such as electron beams, X-rays or ion beams and developed, and the disclosed part of the layer 3 is removed by etching in oxygen plasma to form a pattern. The disclosed part of the layer 2 is then removed by etching with an etchant to form a positive pattern.
JP56027481A 1981-02-26 1981-02-26 Formation of positive pattern Granted JPS57141641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56027481A JPS57141641A (en) 1981-02-26 1981-02-26 Formation of positive pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56027481A JPS57141641A (en) 1981-02-26 1981-02-26 Formation of positive pattern

Publications (2)

Publication Number Publication Date
JPS57141641A true JPS57141641A (en) 1982-09-02
JPS6364771B2 JPS6364771B2 (en) 1988-12-13

Family

ID=12222308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56027481A Granted JPS57141641A (en) 1981-02-26 1981-02-26 Formation of positive pattern

Country Status (1)

Country Link
JP (1) JPS57141641A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965430A (en) * 1982-10-06 1984-04-13 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
EP0163538A2 (en) * 1984-05-30 1985-12-04 Fujitsu Limited Pattern-forming material and its production and use
WO1986005284A1 (en) * 1985-03-07 1986-09-12 Hughes Aircraft Company Polysiloxane resist for ion beam and electron beam lithography

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965430A (en) * 1982-10-06 1984-04-13 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
EP0163538A2 (en) * 1984-05-30 1985-12-04 Fujitsu Limited Pattern-forming material and its production and use
WO1986005284A1 (en) * 1985-03-07 1986-09-12 Hughes Aircraft Company Polysiloxane resist for ion beam and electron beam lithography

Also Published As

Publication number Publication date
JPS6364771B2 (en) 1988-12-13

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