JPS556404A - Forming method for pattern - Google Patents

Forming method for pattern

Info

Publication number
JPS556404A
JPS556404A JP7638478A JP7638478A JPS556404A JP S556404 A JPS556404 A JP S556404A JP 7638478 A JP7638478 A JP 7638478A JP 7638478 A JP7638478 A JP 7638478A JP S556404 A JPS556404 A JP S556404A
Authority
JP
Japan
Prior art keywords
pattern
etching
heat resisting
layer
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7638478A
Other languages
Japanese (ja)
Inventor
Fumio Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7638478A priority Critical patent/JPS556404A/en
Publication of JPS556404A publication Critical patent/JPS556404A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form the excellent fine pattern, by forming the metallic layer and the heat resisting organic layer as the primary layer of the resist, and by applying the side etching to the heat resisting organic layer using the gas plasma, etc.
CONSTITUTION: The heat resisting organic film 2 is applied to the substrate 1, and the gold (Au) 3 is vacuum evaporated on this film 2, and the electron rays, X-rays resisting high resist 4 is applied to the gold layer. Next, the exposure resisting pattern 4a is formed by the electron rays, etc. Next, the etching of the gold 3 is executed through the resisting pattern 4a by means of the ion etching; hereby, the golden pattern 3a is formed. Next, the etching of the heat resisting organic film is executed by the oxygen gas plasma, for baring the pattern to be formed on the substrate 1. Then, the aim metallic material 5 (FeNi, etc., for instance) is vacuum evaporated over the entire surface, and further, the wet etching is applied to the heat resisting organic film 2a; hereby, the desired pattern 5a is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP7638478A 1978-06-26 1978-06-26 Forming method for pattern Pending JPS556404A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7638478A JPS556404A (en) 1978-06-26 1978-06-26 Forming method for pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7638478A JPS556404A (en) 1978-06-26 1978-06-26 Forming method for pattern

Publications (1)

Publication Number Publication Date
JPS556404A true JPS556404A (en) 1980-01-17

Family

ID=13603833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7638478A Pending JPS556404A (en) 1978-06-26 1978-06-26 Forming method for pattern

Country Status (1)

Country Link
JP (1) JPS556404A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943029A (en) * 1982-08-02 1984-03-09 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Lift-off wafer treatment
JPS6071309U (en) * 1983-10-19 1985-05-20 西川計測株式会社 Gas-liquid separator

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52123871A (en) * 1976-04-12 1977-10-18 Hitachi Ltd Thin film forming method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52123871A (en) * 1976-04-12 1977-10-18 Hitachi Ltd Thin film forming method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943029A (en) * 1982-08-02 1984-03-09 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Lift-off wafer treatment
JPS6071309U (en) * 1983-10-19 1985-05-20 西川計測株式会社 Gas-liquid separator
JPH0230001Y2 (en) * 1983-10-19 1990-08-13

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