JPS5615045A - Formation of pattern - Google Patents
Formation of patternInfo
- Publication number
- JPS5615045A JPS5615045A JP9124079A JP9124079A JPS5615045A JP S5615045 A JPS5615045 A JP S5615045A JP 9124079 A JP9124079 A JP 9124079A JP 9124079 A JP9124079 A JP 9124079A JP S5615045 A JPS5615045 A JP S5615045A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- pattern
- chamber
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000010408 film Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To simplify the steps of forming the pattern by irradiating a charge beam to the outer surface of a region to be etched in an organic gas atmosphere to form a hard-etching thin film and dry etching it with the thin film as a mask. CONSTITUTION:A chamber is evacuated to a vacuum to irradiate electron beam to a silicon substrate 1. Then, Trichlene gas is introduced into the chamber, and an electron beam A is irradiated only to the polycrystalline silicon 3 on a gate oxide film 2. In this manner a carbon film 7 is adhered onto the polycrystalline silicon portion 3, and it is plasma etched with the film 7 as a mask to form a silicon gate 3a thereon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9124079A JPS5615045A (en) | 1979-07-17 | 1979-07-17 | Formation of pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9124079A JPS5615045A (en) | 1979-07-17 | 1979-07-17 | Formation of pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5615045A true JPS5615045A (en) | 1981-02-13 |
Family
ID=14020889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9124079A Pending JPS5615045A (en) | 1979-07-17 | 1979-07-17 | Formation of pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5615045A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60167428A (en) * | 1984-02-10 | 1985-08-30 | Mitsubishi Electric Corp | Fine process |
JPS6110241A (en) * | 1984-06-26 | 1986-01-17 | Toshiba Corp | Manufacture of semiconductor device |
DE4334891A1 (en) * | 1993-10-13 | 1995-04-20 | Dresden Ev Inst Festkoerper | Method and device for the preparation of materials samples for examinations of materials |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5461477A (en) * | 1977-10-26 | 1979-05-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of machining by electron beam or ion beam irradiation |
-
1979
- 1979-07-17 JP JP9124079A patent/JPS5615045A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5461477A (en) * | 1977-10-26 | 1979-05-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of machining by electron beam or ion beam irradiation |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60167428A (en) * | 1984-02-10 | 1985-08-30 | Mitsubishi Electric Corp | Fine process |
JPS6110241A (en) * | 1984-06-26 | 1986-01-17 | Toshiba Corp | Manufacture of semiconductor device |
DE4334891A1 (en) * | 1993-10-13 | 1995-04-20 | Dresden Ev Inst Festkoerper | Method and device for the preparation of materials samples for examinations of materials |
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