JPS6481361A - Manufacture of tunnel transistor - Google Patents

Manufacture of tunnel transistor

Info

Publication number
JPS6481361A
JPS6481361A JP23739587A JP23739587A JPS6481361A JP S6481361 A JPS6481361 A JP S6481361A JP 23739587 A JP23739587 A JP 23739587A JP 23739587 A JP23739587 A JP 23739587A JP S6481361 A JPS6481361 A JP S6481361A
Authority
JP
Japan
Prior art keywords
oxide film
silicon
superhigh vacuum
substrate
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23739587A
Other languages
Japanese (ja)
Other versions
JPH0573353B2 (en
Inventor
Masafumi Kawanaka
Junichi Sone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23739587A priority Critical patent/JPS6481361A/en
Publication of JPS6481361A publication Critical patent/JPS6481361A/en
Publication of JPH0573353B2 publication Critical patent/JPH0573353B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form a silicon oxide film having good quality and to preferably control the thickness of the film by a reduced pressure oxidation by including the steps of presenting a silicon cleaned face in a superhigh vacuum chamber and introducing oxygen into the chamber to form a thin silicon oxide film by a thermal oxidizing method. CONSTITUTION:After boron is ion implanted to form a p-type silicon base layer 3 and a high concentration p-type silicon base contact layer 4, a substrate is cleaned and etched, and a thin oxide film is simultaneously formed. It is immediately contained in a superhigh vacuum chamber, the substrate is heated in the superhigh vacuum, the oxide film is evaporated to present a silicon cleaned face, and a silicon single crystalline face is flattened at an atomic layer level. Then, high purity oxygen is introduced into the superhigh vacuum chamber, the substrate is heated, and a thin silicon oxide film 5 is formed. Thereafter, after aluminum to become an emitter electrode 9 is deposited in the superhigh vacuum, it is discharged into the atmosphere, an emitter electrode 9 is formed by etching, and a silicon oxide film 6 is deposited by a CVD method.
JP23739587A 1987-09-24 1987-09-24 Manufacture of tunnel transistor Granted JPS6481361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23739587A JPS6481361A (en) 1987-09-24 1987-09-24 Manufacture of tunnel transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23739587A JPS6481361A (en) 1987-09-24 1987-09-24 Manufacture of tunnel transistor

Publications (2)

Publication Number Publication Date
JPS6481361A true JPS6481361A (en) 1989-03-27
JPH0573353B2 JPH0573353B2 (en) 1993-10-14

Family

ID=17014757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23739587A Granted JPS6481361A (en) 1987-09-24 1987-09-24 Manufacture of tunnel transistor

Country Status (1)

Country Link
JP (1) JPS6481361A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022130A (en) * 1988-06-14 1990-01-08 Nippon Telegr & Teleph Corp <Ntt> Method and device for forming silicon thermal oxide film
WO2002073678A1 (en) * 2001-03-10 2002-09-19 Nanos Aps Method for oxidation of a silicon substrate
JP2006210564A (en) * 2005-01-27 2006-08-10 Matsushita Electric Ind Co Ltd Manufacturing method of bipolar transistor and bipolar transistor manufactured therewith

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022130A (en) * 1988-06-14 1990-01-08 Nippon Telegr & Teleph Corp <Ntt> Method and device for forming silicon thermal oxide film
WO2002073678A1 (en) * 2001-03-10 2002-09-19 Nanos Aps Method for oxidation of a silicon substrate
JP2006210564A (en) * 2005-01-27 2006-08-10 Matsushita Electric Ind Co Ltd Manufacturing method of bipolar transistor and bipolar transistor manufactured therewith

Also Published As

Publication number Publication date
JPH0573353B2 (en) 1993-10-14

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