JPS6427245A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6427245A JPS6427245A JP18320587A JP18320587A JPS6427245A JP S6427245 A JPS6427245 A JP S6427245A JP 18320587 A JP18320587 A JP 18320587A JP 18320587 A JP18320587 A JP 18320587A JP S6427245 A JPS6427245 A JP S6427245A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrodes
- gap
- normal
- insulating film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To improve connection by enhancing withstand voltage etc., by forming a thin insulating layer on gap between two gate electrodes using the normal- pressure chemical vapor growth method to open the gap between gate electrodes conformably. CONSTITUTION:An insulating film 9 is formed thinly on a gap between gate electrodes 8 rather than on a gate electrodes 3A and 3B by the normal-pressure chemical vapor growth method (Normal-pressure CVD method). In this manner, if aeolotropy etching is performed by film thickness difference between the surface of gate electrodes 3A and 3B of the insulating film 9 and the gap between electrodes 8. it becomes possible to allow the insulating film 9 to remain on the gate electrodes 3A and 3B. This will allow the part with poor film quality between a side wall part 6 and an oxidation film 4 to be coated and the problem of withstand voltage between a contact electrode 12 and the gate electrode 3A etc., to be solved. Also, since leakage etc., can be effectively prevented, the process margin etc., can be reduced advantageously for improved microstructure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62183205A JP2550590B2 (en) | 1987-07-22 | 1987-07-22 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62183205A JP2550590B2 (en) | 1987-07-22 | 1987-07-22 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6427245A true JPS6427245A (en) | 1989-01-30 |
| JP2550590B2 JP2550590B2 (en) | 1996-11-06 |
Family
ID=16131615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62183205A Expired - Fee Related JP2550590B2 (en) | 1987-07-22 | 1987-07-22 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2550590B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH033324A (en) * | 1989-05-13 | 1991-01-09 | Hyundai Electron Ind Co Ltd | Manufacture of semiconductor connector |
| JPH0370125A (en) * | 1989-08-10 | 1991-03-26 | Toshiba Corp | Manufacture of semiconductor device |
| US5397726A (en) * | 1992-02-04 | 1995-03-14 | National Semiconductor Corporation | Segment-erasable flash EPROM |
| US5402372A (en) * | 1992-06-01 | 1995-03-28 | National Semiconductor Corporation | High density EEPROM cell array with improved access time and method of manufacture |
-
1987
- 1987-07-22 JP JP62183205A patent/JP2550590B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH033324A (en) * | 1989-05-13 | 1991-01-09 | Hyundai Electron Ind Co Ltd | Manufacture of semiconductor connector |
| JPH0370125A (en) * | 1989-08-10 | 1991-03-26 | Toshiba Corp | Manufacture of semiconductor device |
| US5397726A (en) * | 1992-02-04 | 1995-03-14 | National Semiconductor Corporation | Segment-erasable flash EPROM |
| US5402372A (en) * | 1992-06-01 | 1995-03-28 | National Semiconductor Corporation | High density EEPROM cell array with improved access time and method of manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2550590B2 (en) | 1996-11-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |