JPS55146034A - Manufacture for field effect type semiconductor sensor - Google Patents

Manufacture for field effect type semiconductor sensor

Info

Publication number
JPS55146034A
JPS55146034A JP5452879A JP5452879A JPS55146034A JP S55146034 A JPS55146034 A JP S55146034A JP 5452879 A JP5452879 A JP 5452879A JP 5452879 A JP5452879 A JP 5452879A JP S55146034 A JPS55146034 A JP S55146034A
Authority
JP
Japan
Prior art keywords
film
manufacture
stable
type semiconductor
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5452879A
Other languages
Japanese (ja)
Other versions
JPS6247251B2 (en
Inventor
Kazumuki Yanagisawa
Hironobu Aoki
Takashi Mizusaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP5452879A priority Critical patent/JPS55146034A/en
Publication of JPS55146034A publication Critical patent/JPS55146034A/en
Publication of JPS6247251B2 publication Critical patent/JPS6247251B2/ja
Granted legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To obtain stable sensor without contamination on the contact part, after forming the sensing film on the gate insulation film of FET covering the entire surface with stable film by using the alkoxyde solution.
CONSTITUTION: After coating all the surfaces of FET providing the drain contact region 16, source contact region 17 and element sensing section (gate) 19 with stable film made of Si3N4, the solution of metal alkoxyde is coated on the element sensing section 19 and it is in hydrolysis and the sensing film is formed with baking under inactive gas. Further, after removing the surface stable film of drain and source contact and the oxide film under it with plasma etching, the sensor is formed with the drain contact 12 and the source contact 21.
COPYRIGHT: (C)1980,JPO&Japio
JP5452879A 1979-05-02 1979-05-02 Manufacture for field effect type semiconductor sensor Granted JPS55146034A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5452879A JPS55146034A (en) 1979-05-02 1979-05-02 Manufacture for field effect type semiconductor sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5452879A JPS55146034A (en) 1979-05-02 1979-05-02 Manufacture for field effect type semiconductor sensor

Publications (2)

Publication Number Publication Date
JPS55146034A true JPS55146034A (en) 1980-11-14
JPS6247251B2 JPS6247251B2 (en) 1987-10-07

Family

ID=12973153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5452879A Granted JPS55146034A (en) 1979-05-02 1979-05-02 Manufacture for field effect type semiconductor sensor

Country Status (1)

Country Link
JP (1) JPS55146034A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924245A (en) * 1982-07-31 1984-02-07 Shimadzu Corp Preparation of ion sensor
JPS60115841A (en) * 1983-11-28 1985-06-22 Shimadzu Corp Ion sensor
JPS6270749A (en) * 1985-09-25 1987-04-01 Toshiba Corp Fet sensor and its preparation
JPH04204367A (en) * 1990-11-30 1992-07-24 Horiba Ltd Method for manufacturing ph response film

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS648856U (en) * 1987-06-26 1989-01-18

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924245A (en) * 1982-07-31 1984-02-07 Shimadzu Corp Preparation of ion sensor
JPS60115841A (en) * 1983-11-28 1985-06-22 Shimadzu Corp Ion sensor
JPH0469337B2 (en) * 1983-11-28 1992-11-05 Shimadzu Corp
JPS6270749A (en) * 1985-09-25 1987-04-01 Toshiba Corp Fet sensor and its preparation
JPH04204367A (en) * 1990-11-30 1992-07-24 Horiba Ltd Method for manufacturing ph response film

Also Published As

Publication number Publication date
JPS6247251B2 (en) 1987-10-07

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