JPS562547A - Electric field effect semiconductor ion sensor - Google Patents

Electric field effect semiconductor ion sensor

Info

Publication number
JPS562547A
JPS562547A JP7850079A JP7850079A JPS562547A JP S562547 A JPS562547 A JP S562547A JP 7850079 A JP7850079 A JP 7850079A JP 7850079 A JP7850079 A JP 7850079A JP S562547 A JPS562547 A JP S562547A
Authority
JP
Japan
Prior art keywords
film
sensitive film
gate
electric field
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7850079A
Other languages
Japanese (ja)
Inventor
Kazumuki Yanagisawa
Kiyozo Koshiishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP7850079A priority Critical patent/JPS562547A/en
Publication of JPS562547A publication Critical patent/JPS562547A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve the durability of a sensor by preventing a sensitive film from dissolving out by coating a sensitive film surface, made of a glassy or crystalline inorganic material formed on a gate insulating film, with a porous polymer.
CONSTITUTION: On the surface of P-type silicon substrate 11, N-type source diffused region 12 and drain diffused region 13 are formed and while gate oxide film 14 of a silicon oxide is formed on a gate region, the whole of substrate 11 is covered with oxide film 15. Next, surface stabilized film 16 made of an ion impermeable insulating material (SiN4, Al2D3, etc.) is formed on the entire surface of the element. As an Na+ sensitive film, for example, a solution of Si(C2H5)4, Al(i- OC4H9)3 and NaOCH3 is applied on at least the gate region and then baked to form sensitive film 17. Next, porous polymer film 18 of vinyl chloride, "Teflon", etc., is applied so as to prevent sensitive film 17 from dissolving into a measured solution.
COPYRIGHT: (C)1981,JPO&Japio
JP7850079A 1979-06-21 1979-06-21 Electric field effect semiconductor ion sensor Pending JPS562547A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7850079A JPS562547A (en) 1979-06-21 1979-06-21 Electric field effect semiconductor ion sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7850079A JPS562547A (en) 1979-06-21 1979-06-21 Electric field effect semiconductor ion sensor

Publications (1)

Publication Number Publication Date
JPS562547A true JPS562547A (en) 1981-01-12

Family

ID=13663674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7850079A Pending JPS562547A (en) 1979-06-21 1979-06-21 Electric field effect semiconductor ion sensor

Country Status (1)

Country Link
JP (1) JPS562547A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5870154A (en) * 1981-10-22 1983-04-26 Kuraray Co Ltd Manufacture of cation sensor
JPS6079257A (en) * 1983-10-06 1985-05-07 Shimadzu Corp Fet ion selective electrode
JPS60115841A (en) * 1983-11-28 1985-06-22 Shimadzu Corp Ion sensor
JPH04204367A (en) * 1990-11-30 1992-07-24 Horiba Ltd Method for manufacturing ph response film

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5870154A (en) * 1981-10-22 1983-04-26 Kuraray Co Ltd Manufacture of cation sensor
JPH0252820B2 (en) * 1981-10-22 1990-11-14 Kuraray Co
JPS6079257A (en) * 1983-10-06 1985-05-07 Shimadzu Corp Fet ion selective electrode
JPH0469336B2 (en) * 1983-10-06 1992-11-05 Shimadzu Corp
JPS60115841A (en) * 1983-11-28 1985-06-22 Shimadzu Corp Ion sensor
JPH0469337B2 (en) * 1983-11-28 1992-11-05 Shimadzu Corp
JPH04204367A (en) * 1990-11-30 1992-07-24 Horiba Ltd Method for manufacturing ph response film

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