JPS562547A - Electric field effect semiconductor ion sensor - Google Patents
Electric field effect semiconductor ion sensorInfo
- Publication number
- JPS562547A JPS562547A JP7850079A JP7850079A JPS562547A JP S562547 A JPS562547 A JP S562547A JP 7850079 A JP7850079 A JP 7850079A JP 7850079 A JP7850079 A JP 7850079A JP S562547 A JPS562547 A JP S562547A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sensitive film
- gate
- electric field
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve the durability of a sensor by preventing a sensitive film from dissolving out by coating a sensitive film surface, made of a glassy or crystalline inorganic material formed on a gate insulating film, with a porous polymer.
CONSTITUTION: On the surface of P-type silicon substrate 11, N-type source diffused region 12 and drain diffused region 13 are formed and while gate oxide film 14 of a silicon oxide is formed on a gate region, the whole of substrate 11 is covered with oxide film 15. Next, surface stabilized film 16 made of an ion impermeable insulating material (SiN4, Al2D3, etc.) is formed on the entire surface of the element. As an Na+ sensitive film, for example, a solution of Si(C2H5)4, Al(i- OC4H9)3 and NaOCH3 is applied on at least the gate region and then baked to form sensitive film 17. Next, porous polymer film 18 of vinyl chloride, "Teflon", etc., is applied so as to prevent sensitive film 17 from dissolving into a measured solution.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7850079A JPS562547A (en) | 1979-06-21 | 1979-06-21 | Electric field effect semiconductor ion sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7850079A JPS562547A (en) | 1979-06-21 | 1979-06-21 | Electric field effect semiconductor ion sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS562547A true JPS562547A (en) | 1981-01-12 |
Family
ID=13663674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7850079A Pending JPS562547A (en) | 1979-06-21 | 1979-06-21 | Electric field effect semiconductor ion sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS562547A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5870154A (en) * | 1981-10-22 | 1983-04-26 | Kuraray Co Ltd | Manufacture of cation sensor |
JPS6079257A (en) * | 1983-10-06 | 1985-05-07 | Shimadzu Corp | Fet ion selective electrode |
JPS60115841A (en) * | 1983-11-28 | 1985-06-22 | Shimadzu Corp | Ion sensor |
JPH04204367A (en) * | 1990-11-30 | 1992-07-24 | Horiba Ltd | Method for manufacturing ph response film |
-
1979
- 1979-06-21 JP JP7850079A patent/JPS562547A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5870154A (en) * | 1981-10-22 | 1983-04-26 | Kuraray Co Ltd | Manufacture of cation sensor |
JPH0252820B2 (en) * | 1981-10-22 | 1990-11-14 | Kuraray Co | |
JPS6079257A (en) * | 1983-10-06 | 1985-05-07 | Shimadzu Corp | Fet ion selective electrode |
JPH0469336B2 (en) * | 1983-10-06 | 1992-11-05 | Shimadzu Corp | |
JPS60115841A (en) * | 1983-11-28 | 1985-06-22 | Shimadzu Corp | Ion sensor |
JPH0469337B2 (en) * | 1983-11-28 | 1992-11-05 | Shimadzu Corp | |
JPH04204367A (en) * | 1990-11-30 | 1992-07-24 | Horiba Ltd | Method for manufacturing ph response film |
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