JPS55110056A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55110056A
JPS55110056A JP1604979A JP1604979A JPS55110056A JP S55110056 A JPS55110056 A JP S55110056A JP 1604979 A JP1604979 A JP 1604979A JP 1604979 A JP1604979 A JP 1604979A JP S55110056 A JPS55110056 A JP S55110056A
Authority
JP
Japan
Prior art keywords
layer
resistance
sio
affected
covered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1604979A
Other languages
Japanese (ja)
Inventor
Yutaka Etsuno
Takashi Yasujima
Jiro Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1604979A priority Critical patent/JPS55110056A/en
Publication of JPS55110056A publication Critical patent/JPS55110056A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form a resistance layer with less variation by providing a doped SiC layer on an element separation layer through an insulating layer.
CONSTITUTION: Semiconductor substrate 11 is separated into specified units by means of separation layer 12. These are covered with SiO2 film 13, and by the CVD method, SiC film 14 being provided on layer 12. This is annealed by injecting ions. Lyaer 14 is covered with SiO2 layer 15, and by opening its both ends, Al lead parts 16, 16' are provided. In this structure, the value of resistance is not affected by the crystal orientation as the diffusion resistance, so that variation is small. Further, active element part 21 is not affected, so that this is effective in miniaturization.
COPYRIGHT: (C)1980,JPO&Japio
JP1604979A 1979-02-16 1979-02-16 Semiconductor device Pending JPS55110056A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1604979A JPS55110056A (en) 1979-02-16 1979-02-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1604979A JPS55110056A (en) 1979-02-16 1979-02-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55110056A true JPS55110056A (en) 1980-08-25

Family

ID=11905713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1604979A Pending JPS55110056A (en) 1979-02-16 1979-02-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55110056A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878449A (en) * 1981-11-04 1983-05-12 Toshiba Corp Generating circuit for reference potential
JPS59138381A (en) * 1983-01-28 1984-08-08 Nec Corp Integrated circuit
JPS59138362A (en) * 1983-01-28 1984-08-08 Nec Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919778A (en) * 1972-02-29 1974-02-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919778A (en) * 1972-02-29 1974-02-21

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878449A (en) * 1981-11-04 1983-05-12 Toshiba Corp Generating circuit for reference potential
JPS59138381A (en) * 1983-01-28 1984-08-08 Nec Corp Integrated circuit
JPS59138362A (en) * 1983-01-28 1984-08-08 Nec Corp Semiconductor device

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