JPS55110056A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55110056A JPS55110056A JP1604979A JP1604979A JPS55110056A JP S55110056 A JPS55110056 A JP S55110056A JP 1604979 A JP1604979 A JP 1604979A JP 1604979 A JP1604979 A JP 1604979A JP S55110056 A JPS55110056 A JP S55110056A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistance
- sio
- affected
- covered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form a resistance layer with less variation by providing a doped SiC layer on an element separation layer through an insulating layer.
CONSTITUTION: Semiconductor substrate 11 is separated into specified units by means of separation layer 12. These are covered with SiO2 film 13, and by the CVD method, SiC film 14 being provided on layer 12. This is annealed by injecting ions. Lyaer 14 is covered with SiO2 layer 15, and by opening its both ends, Al lead parts 16, 16' are provided. In this structure, the value of resistance is not affected by the crystal orientation as the diffusion resistance, so that variation is small. Further, active element part 21 is not affected, so that this is effective in miniaturization.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1604979A JPS55110056A (en) | 1979-02-16 | 1979-02-16 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1604979A JPS55110056A (en) | 1979-02-16 | 1979-02-16 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55110056A true JPS55110056A (en) | 1980-08-25 |
Family
ID=11905713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1604979A Pending JPS55110056A (en) | 1979-02-16 | 1979-02-16 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55110056A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5878449A (en) * | 1981-11-04 | 1983-05-12 | Toshiba Corp | Generating circuit for reference potential |
JPS59138381A (en) * | 1983-01-28 | 1984-08-08 | Nec Corp | Integrated circuit |
JPS59138362A (en) * | 1983-01-28 | 1984-08-08 | Nec Corp | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4919778A (en) * | 1972-02-29 | 1974-02-21 |
-
1979
- 1979-02-16 JP JP1604979A patent/JPS55110056A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4919778A (en) * | 1972-02-29 | 1974-02-21 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5878449A (en) * | 1981-11-04 | 1983-05-12 | Toshiba Corp | Generating circuit for reference potential |
JPS59138381A (en) * | 1983-01-28 | 1984-08-08 | Nec Corp | Integrated circuit |
JPS59138362A (en) * | 1983-01-28 | 1984-08-08 | Nec Corp | Semiconductor device |
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