JPS5658259A - Semiconductor device and production thereof - Google Patents

Semiconductor device and production thereof

Info

Publication number
JPS5658259A
JPS5658259A JP13439679A JP13439679A JPS5658259A JP S5658259 A JPS5658259 A JP S5658259A JP 13439679 A JP13439679 A JP 13439679A JP 13439679 A JP13439679 A JP 13439679A JP S5658259 A JPS5658259 A JP S5658259A
Authority
JP
Japan
Prior art keywords
region
film
type
surrounded
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13439679A
Inventor
Masaharu Aoyama
Jiro Oshima
Seiji Yasuda
Toshio Yonezawa
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP13439679A priority Critical patent/JPS5658259A/en
Publication of JPS5658259A publication Critical patent/JPS5658259A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642Isolation within the component, i.e. internal isolation
    • H01L29/0649Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Abstract

PURPOSE: To make an element higher in dielectric strength and minute in size by arranging a gate region in a channel region surrounded with an insulation region formed at the end thereof between source and drain regions after they are formed on the semiconductor substrate.
CONSTITUTION: A p+ type source region 22 and a drain region 23 are formed by diffusion into an n type si substrate 21 and a p+ type region 24 is provided in an area of the substrate 21 surrounded thereby to make a channel region. Then, an SiO2 film 27 and an Si3N4 film 28 are applied over the entire substrate in such a manner that they are separately positoned on the boundary between the region 22 and the region 24 and on the boundary between the region 23 and the region 24 and holes are etched through the film 28. Then, it wholely undergoes a heat treatment to produce an insulation regions 25a and 25b connected to the film 27. Thereafter, an n+ type gate region 26 is diffused into the layer of the region 24 surrounded by said region and is entirly protected by a PSG film 29. This can prevent the concentration of the electric field enabling the space to be narrower between the regions 22 and 23.
COPYRIGHT: (C)1981,JPO&Japio
JP13439679A 1979-10-18 1979-10-18 Semiconductor device and production thereof Pending JPS5658259A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13439679A JPS5658259A (en) 1979-10-18 1979-10-18 Semiconductor device and production thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP13439679A JPS5658259A (en) 1979-10-18 1979-10-18 Semiconductor device and production thereof
DE19803039009 DE3039009C2 (en) 1979-10-18 1980-10-15
GB8033736A GB2063561B (en) 1979-10-18 1980-10-20 Semiconductor device and manufacturing method therefor

Publications (1)

Publication Number Publication Date
JPS5658259A true JPS5658259A (en) 1981-05-21

Family

ID=15127414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13439679A Pending JPS5658259A (en) 1979-10-18 1979-10-18 Semiconductor device and production thereof

Country Status (3)

Country Link
JP (1) JPS5658259A (en)
DE (1) DE3039009C2 (en)
GB (1) GB2063561B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234938A (en) * 1988-07-25 1990-02-05 Matsushita Electron Corp Semiconductor device
US9868071B2 (en) 2008-12-12 2018-01-16 Kids Ii, Inc. Electromagnetic swing
US10016069B2 (en) 2014-08-08 2018-07-10 Kids Ii, Inc. Control device for a children's bouncer and infant support

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2070858B (en) * 1980-03-03 1985-02-06 Raytheon Co Shallow channel field effect transistor
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
IT1200725B (en) * 1985-08-28 1989-01-27 Sgs Microelettronica Spa Insulation Structure in mos devices and method of preparation thereof
DE3620686C2 (en) * 1986-06-20 1999-07-22 Daimler Chrysler Ag Structured semiconductor body
CN103972302A (en) * 2014-05-26 2014-08-06 电子科技大学 JFET (junction field-effect transistor) device and manufacturing method thereof
CN103972295A (en) * 2014-05-30 2014-08-06 电子科技大学 JFET (junction field-effect transistor) device and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5061984A (en) * 1973-10-01 1975-05-27
JPS5364480A (en) * 1976-11-22 1978-06-08 Toshiba Corp Field effect semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5061984A (en) * 1973-10-01 1975-05-27
JPS5364480A (en) * 1976-11-22 1978-06-08 Toshiba Corp Field effect semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234938A (en) * 1988-07-25 1990-02-05 Matsushita Electron Corp Semiconductor device
US9868071B2 (en) 2008-12-12 2018-01-16 Kids Ii, Inc. Electromagnetic swing
US10016069B2 (en) 2014-08-08 2018-07-10 Kids Ii, Inc. Control device for a children's bouncer and infant support

Also Published As

Publication number Publication date
GB2063561A (en) 1981-06-03
DE3039009C2 (en) 1985-12-19
DE3039009A1 (en) 1981-05-07
GB2063561B (en) 1983-10-12

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