GB2063561B - Semiconductor device and manufacturing method therefor - Google Patents
Semiconductor device and manufacturing method thereforInfo
- Publication number
- GB2063561B GB2063561B GB8033736A GB8033736A GB2063561B GB 2063561 B GB2063561 B GB 2063561B GB 8033736 A GB8033736 A GB 8033736A GB 8033736 A GB8033736 A GB 8033736A GB 2063561 B GB2063561 B GB 2063561B
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacturing
- semiconductor device
- method therefor
- therefor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13439679A JPS5658259A (en) | 1979-10-18 | 1979-10-18 | Semiconductor device and production thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2063561A GB2063561A (en) | 1981-06-03 |
GB2063561B true GB2063561B (en) | 1983-10-12 |
Family
ID=15127414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8033736A Expired GB2063561B (en) | 1979-10-18 | 1980-10-20 | Semiconductor device and manufacturing method therefor |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5658259A (en) |
DE (1) | DE3039009C2 (en) |
GB (1) | GB2063561B (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2070858B (en) * | 1980-03-03 | 1985-02-06 | Raytheon Co | Shallow channel field effect transistor |
US4523368A (en) * | 1980-03-03 | 1985-06-18 | Raytheon Company | Semiconductor devices and manufacturing methods |
IT1200725B (en) * | 1985-08-28 | 1989-01-27 | Sgs Microelettronica Spa | INSULATION STRUCTURE IN MOS DEVICES AND ITS PREPARATION PROCEDURE |
DE3620686C2 (en) * | 1986-06-20 | 1999-07-22 | Daimler Chrysler Ag | Structured semiconductor body |
JPH0234938A (en) * | 1988-07-25 | 1990-02-05 | Matsushita Electron Corp | Semiconductor device |
BRPI0923116A2 (en) | 2008-12-12 | 2018-10-23 | Kids Ii Inc | electromagnetic balance |
CN103972302A (en) * | 2014-05-26 | 2014-08-06 | 电子科技大学 | JFET (junction field-effect transistor) device and manufacturing method thereof |
CN103972295A (en) * | 2014-05-30 | 2014-08-06 | 电子科技大学 | JFET (junction field-effect transistor) device and manufacturing method thereof |
CN204318176U (en) | 2014-08-08 | 2015-05-13 | 儿童二代公司 | For the control appliance of children's bouncer and baby support |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5729065B2 (en) * | 1973-10-01 | 1982-06-21 | ||
JPS5364480A (en) * | 1976-11-22 | 1978-06-08 | Toshiba Corp | Field effect semiconductor device |
-
1979
- 1979-10-18 JP JP13439679A patent/JPS5658259A/en active Pending
-
1980
- 1980-10-15 DE DE19803039009 patent/DE3039009C2/en not_active Expired
- 1980-10-20 GB GB8033736A patent/GB2063561B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3039009A1 (en) | 1981-05-07 |
JPS5658259A (en) | 1981-05-21 |
DE3039009C2 (en) | 1985-12-19 |
GB2063561A (en) | 1981-06-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
746 | Register noted 'licences of right' (sect. 46/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19951020 |