JPS55132054A - Semiconductor device and method of fabricating same - Google Patents

Semiconductor device and method of fabricating same

Info

Publication number
JPS55132054A
JPS55132054A JP4112580A JP4112580A JPS55132054A JP S55132054 A JPS55132054 A JP S55132054A JP 4112580 A JP4112580 A JP 4112580A JP 4112580 A JP4112580 A JP 4112580A JP S55132054 A JPS55132054 A JP S55132054A
Authority
JP
Japan
Prior art keywords
semiconductor device
fabricating same
fabricating
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4112580A
Other languages
Japanese (ja)
Other versions
JPH0332234B2 (en
Inventor
Ii Hendorikuson Toomasu
Jii Koerushiyu Ronarudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of JPS55132054A publication Critical patent/JPS55132054A/en
Publication of JPH0332234B2 publication Critical patent/JPH0332234B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
JP4112580A 1979-03-28 1980-03-28 Semiconductor device and method of fabricating same Granted JPS55132054A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2484079A 1979-03-28 1979-03-28

Publications (2)

Publication Number Publication Date
JPS55132054A true JPS55132054A (en) 1980-10-14
JPH0332234B2 JPH0332234B2 (en) 1991-05-10

Family

ID=21822678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4112580A Granted JPS55132054A (en) 1979-03-28 1980-03-28 Semiconductor device and method of fabricating same

Country Status (5)

Country Link
JP (1) JPS55132054A (en)
CA (1) CA1142271A (en)
DE (1) DE3011778A1 (en)
FR (1) FR2452789A1 (en)
GB (1) GB2045525A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984572A (en) * 1982-11-08 1984-05-16 Nec Corp Semiconductor device
JPS63104466A (en) * 1986-10-22 1988-05-09 Mitsubishi Electric Corp Mos type dynamic random access memory (ram)
JPH04326570A (en) * 1991-04-26 1992-11-16 Nec Corp Mos integrated circuit
JPH0669502A (en) * 1992-08-20 1994-03-11 Matsushita Electron Corp High-tension mis transistor
US7026214B2 (en) 2000-12-14 2006-04-11 Kabushiki Kaisha Toshiba Offset-gate-type semiconductor device
JP2007214398A (en) * 2006-02-10 2007-08-23 Nec Corp Semiconductor integrated circuit
JP2009212110A (en) * 2008-02-29 2009-09-17 Renesas Technology Corp Transistor and its manufacturing method

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4429237A (en) * 1981-03-20 1984-01-31 International Business Machines Corp. High voltage on chip FET driver
JPS57204172A (en) * 1981-06-08 1982-12-14 Ibm Field effect transistor
DE3382294D1 (en) * 1982-02-22 1991-07-04 Toshiba Kawasaki Kk Means for preventing the breakdown of an insulating layer in semiconductor devices.
US5087591A (en) * 1985-01-22 1992-02-11 Texas Instruments Incorporated Contact etch process
US4734752A (en) * 1985-09-27 1988-03-29 Advanced Micro Devices, Inc. Electrostatic discharge protection device for CMOS integrated circuit outputs
EP0242540A1 (en) * 1986-04-21 1987-10-28 International Business Machines Corporation Method and structure for reducing resistance in integrated circuits
US5047820A (en) * 1988-09-14 1991-09-10 Micrel, Inc. Semi self-aligned high voltage P channel FET
US4885627A (en) * 1988-10-18 1989-12-05 International Business Machines Corporation Method and structure for reducing resistance in integrated circuits

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114182A (en) * 1974-02-15 1975-09-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114182A (en) * 1974-02-15 1975-09-06

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984572A (en) * 1982-11-08 1984-05-16 Nec Corp Semiconductor device
JPS63104466A (en) * 1986-10-22 1988-05-09 Mitsubishi Electric Corp Mos type dynamic random access memory (ram)
JPH04326570A (en) * 1991-04-26 1992-11-16 Nec Corp Mos integrated circuit
JPH0669502A (en) * 1992-08-20 1994-03-11 Matsushita Electron Corp High-tension mis transistor
US7026214B2 (en) 2000-12-14 2006-04-11 Kabushiki Kaisha Toshiba Offset-gate-type semiconductor device
US7061060B2 (en) 2000-12-14 2006-06-13 Kabushiki Kaisha Toshiba Offset-gate-type semiconductor device
JP2007214398A (en) * 2006-02-10 2007-08-23 Nec Corp Semiconductor integrated circuit
JP2009212110A (en) * 2008-02-29 2009-09-17 Renesas Technology Corp Transistor and its manufacturing method

Also Published As

Publication number Publication date
DE3011778A1 (en) 1980-10-09
JPH0332234B2 (en) 1991-05-10
CA1142271A (en) 1983-03-01
FR2452789A1 (en) 1980-10-24
GB2045525A (en) 1980-10-29

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