FR2452789A1 - FIELD EFFECT TRANSISTOR - Google Patents

FIELD EFFECT TRANSISTOR

Info

Publication number
FR2452789A1
FR2452789A1 FR8007109A FR8007109A FR2452789A1 FR 2452789 A1 FR2452789 A1 FR 2452789A1 FR 8007109 A FR8007109 A FR 8007109A FR 8007109 A FR8007109 A FR 8007109A FR 2452789 A1 FR2452789 A1 FR 2452789A1
Authority
FR
France
Prior art keywords
effect transistor
source
drain regions
field effect
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR8007109A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of FR2452789A1 publication Critical patent/FR2452789A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

TRANSISTOR A EFFET DE CHAMP ET SON PROCEDE DE CONSTRUCTION POUR AUGMENTER LES TENSIONS DE PERCAGE ET DE RUPTURE POUR DES POLARISATIONS INVERSES. LE TRANSISTOR COMPREND DES ELECTRODES DE GRILLE 16 ET DE PROTECTION 28, 29, DES REGIONS DE SOURCE ET DE DRAIN 10, 13 DANS UN CORPS SEMI-CONDUCTEUR 21 ET UNE COUCHE ISOLANTE 19 DEPOSEE SUR LA SURFACE DU SEMI-CONDUCTEUR ET COMPORTANT DES TROUS DE CONNEXIONS 11, 14 AUX REGIONS DE SOURCE ET DE DRAIN, L'ELECTRODE DE PROTECTION ENTOURANT LA CONNEXION A LA REGION CORRESPONDANTE ET ETANT PLUS PRES DE CETTE CONNEXION ET PLUS LOIN DE LA SURFACE DU CORPS SEMI-CONDUCTEUR QUE L'ELECTRODE DE GRILLE. APPLICATION AUX CIRCUITS INTEGRES MONOLITHIQUES.FIELD-EFFECT TRANSISTOR AND ITS CONSTRUCTION PROCESS TO INCREASE PIERCING AND BREAKING TENSIONS FOR REVERSE POLARIZATIONS. THE TRANSISTOR CONSISTS OF GRID 16 AND PROTECTION ELECTRODES 28, 29, SOURCE AND DRAIN REGIONS 10, 13 IN A SEMICONDUCTOR BODY 21 AND AN INSULATING LAYER 19 DEPOSITED ON THE SURFACE OF THE SEMICONDUCTOR AND INCLUDING HOLES OF CONNECTIONS 11, 14 AT SOURCE AND DRAIN REGIONS, THE PROTECTION ELECTRODE SURROUNDING THE CONNECTION TO THE CORRESPONDING REGION AND BEING CLOSER TO THIS CONNECTION AND FURTHER FROM THE SURFACE OF THE SEMI-CONDUCTIVE BODY THAN THE GATE ELECTRODE. APPLICATION TO MONOLITHIC INTEGRATED CIRCUITS.

FR8007109A 1979-03-28 1980-03-28 FIELD EFFECT TRANSISTOR Withdrawn FR2452789A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2484079A 1979-03-28 1979-03-28

Publications (1)

Publication Number Publication Date
FR2452789A1 true FR2452789A1 (en) 1980-10-24

Family

ID=21822678

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8007109A Withdrawn FR2452789A1 (en) 1979-03-28 1980-03-28 FIELD EFFECT TRANSISTOR

Country Status (5)

Country Link
JP (1) JPS55132054A (en)
CA (1) CA1142271A (en)
DE (1) DE3011778A1 (en)
FR (1) FR2452789A1 (en)
GB (1) GB2045525A (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4429237A (en) * 1981-03-20 1984-01-31 International Business Machines Corp. High voltage on chip FET driver
JPS57204172A (en) * 1981-06-08 1982-12-14 Ibm Field effect transistor
EP0087155B1 (en) * 1982-02-22 1991-05-29 Kabushiki Kaisha Toshiba Means for preventing the breakdown of an insulation layer in semiconductor devices
JPS5984572A (en) * 1982-11-08 1984-05-16 Nec Corp Semiconductor device
US5087591A (en) * 1985-01-22 1992-02-11 Texas Instruments Incorporated Contact etch process
US4734752A (en) * 1985-09-27 1988-03-29 Advanced Micro Devices, Inc. Electrostatic discharge protection device for CMOS integrated circuit outputs
EP0242540A1 (en) * 1986-04-21 1987-10-28 International Business Machines Corporation Method and structure for reducing resistance in integrated circuits
JPS63104466A (en) * 1986-10-22 1988-05-09 Mitsubishi Electric Corp Mos type dynamic random access memory (ram)
US5047820A (en) * 1988-09-14 1991-09-10 Micrel, Inc. Semi self-aligned high voltage P channel FET
US4885627A (en) * 1988-10-18 1989-12-05 International Business Machines Corporation Method and structure for reducing resistance in integrated circuits
JP2720624B2 (en) * 1991-04-26 1998-03-04 日本電気株式会社 MOS integrated circuit
JP2690244B2 (en) * 1992-08-20 1997-12-10 松下電子工業株式会社 MIS type high voltage transistor and method of manufacturing the same
US6552389B2 (en) 2000-12-14 2003-04-22 Kabushiki Kaisha Toshiba Offset-gate-type semiconductor device
JP2007214398A (en) * 2006-02-10 2007-08-23 Nec Corp Semiconductor integrated circuit
JP2009212110A (en) * 2008-02-29 2009-09-17 Renesas Technology Corp Transistor and its manufacturing method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435757B2 (en) * 1974-02-15 1979-11-05

Also Published As

Publication number Publication date
JPH0332234B2 (en) 1991-05-10
JPS55132054A (en) 1980-10-14
CA1142271A (en) 1983-03-01
DE3011778A1 (en) 1980-10-09
GB2045525A (en) 1980-10-29

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Legal Events

Date Code Title Description
ST Notification of lapse
RE Withdrawal of published application