GB2254187A - Positive control of the source/drain-gate overlap in self-aligned tfts via a top hat gate electrode configuration - Google Patents

Positive control of the source/drain-gate overlap in self-aligned tfts via a top hat gate electrode configuration

Info

Publication number
GB2254187A
GB2254187A GB9209424A GB9209424A GB2254187A GB 2254187 A GB2254187 A GB 2254187A GB 9209424 A GB9209424 A GB 9209424A GB 9209424 A GB9209424 A GB 9209424A GB 2254187 A GB2254187 A GB 2254187A
Authority
GB
United Kingdom
Prior art keywords
source
gate
gate electrode
self
positive control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9209424A
Other versions
GB9209424D0 (en
Inventor
Ching Yeu Wei
George Edward Possin
Robert Forrest Kwasnick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB9209424D0 publication Critical patent/GB9209424D0/en
Publication of GB2254187A publication Critical patent/GB2254187A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

Positive control over the length of the overlap between the gate electrode (18) and the source and drain electrodes (36) in a thin film transistor is provided by a gate conductor layer (18) comprising two different conductors (14, 16) having differing etching characteristics. As part of the gate conductor pattern definition process, both gate conductors (14, 16) are etched to expose the underlying material (12) and the upper gate conductor layer (16) is etched back to expose the first gate conductor layer (14) in accordance with the desired overlap between the gate electrode (18) and the source and drain electrodes (36). Thereafter, the remainder of the device is fabricated with the source and drain electrodes (36) self-aligned with respect to the second gate conductor layer (14) using a planarization and non-selective etch method.
GB9209424A 1990-10-05 1992-04-30 Positive control of the source/drain-gate overlap in self-aligned tfts via a top hat gate electrode configuration Withdrawn GB2254187A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59342390A 1990-10-05 1990-10-05
PCT/US1991/007335 WO1992006497A1 (en) 1990-10-05 1991-10-02 Positive control of the source/drain-gate overlap in self-aligned tfts via a top hat gate electrode configuration

Publications (2)

Publication Number Publication Date
GB9209424D0 GB9209424D0 (en) 1992-07-22
GB2254187A true GB2254187A (en) 1992-09-30

Family

ID=24374648

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9209424A Withdrawn GB2254187A (en) 1990-10-05 1992-04-30 Positive control of the source/drain-gate overlap in self-aligned tfts via a top hat gate electrode configuration

Country Status (4)

Country Link
JP (1) JPH04505830A (en)
DE (1) DE4192352T (en)
GB (1) GB2254187A (en)
WO (1) WO1992006497A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2322968A (en) * 1997-03-04 1998-09-09 Lg Electronics Inc Thin-film transistor and method of making same
GB2328793A (en) * 1997-08-26 1999-03-03 Lg Electronics Inc Thin-film transistor and method of making same
GB2338105A (en) * 1997-03-04 1999-12-08 Lg Electronics Inc A method of making a thin-film transistor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2965283B2 (en) * 1994-07-13 1999-10-18 ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド Method for manufacturing thin film transistor
FR2761809B1 (en) * 1997-03-04 2002-03-01 Lg Electronics Inc THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
KR100430950B1 (en) * 1998-09-01 2004-06-16 엘지.필립스 엘시디 주식회사 Thin film transistor and its manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4651185A (en) * 1983-08-15 1987-03-17 Alphasil, Inc. Method of manufacturing thin film transistors and transistors made thereby
US4700458A (en) * 1981-07-27 1987-10-20 Tokyo Shibaura Denki Kabushiki Kaisha Method of manufacture thin film transistor
US4767723A (en) * 1987-10-30 1988-08-30 International Business Machines Corporation Process for making self-aligning thin film transistors
US4862234A (en) * 1986-11-29 1989-08-29 Sharp Kabushiki Kaisha Thin-film transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62239579A (en) * 1986-04-10 1987-10-20 Alps Electric Co Ltd Manufacture of thin film transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4700458A (en) * 1981-07-27 1987-10-20 Tokyo Shibaura Denki Kabushiki Kaisha Method of manufacture thin film transistor
US4651185A (en) * 1983-08-15 1987-03-17 Alphasil, Inc. Method of manufacturing thin film transistors and transistors made thereby
US4862234A (en) * 1986-11-29 1989-08-29 Sharp Kabushiki Kaisha Thin-film transistor
US4767723A (en) * 1987-10-30 1988-08-30 International Business Machines Corporation Process for making self-aligning thin film transistors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Silicon Processing For the VLSI Era",Vol.1(Wolf et al),pub Jun.1987 Lattice Press USA p.558,Fig.176 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548829B2 (en) 1997-03-04 2003-04-15 Lg Lcd Inc. Thin-film transistor
US6340610B1 (en) 1997-03-04 2002-01-22 Lg. Philips Lcd Co., Ltd Thin-film transistor and method of making same
US5905274A (en) * 1997-03-04 1999-05-18 L.G. Electronics, Inc. Thin-film transistor and method of making same
GB2322968B (en) * 1997-03-04 1999-09-29 Lg Electronics Inc Thin-film transistor and method of making same
GB2338105A (en) * 1997-03-04 1999-12-08 Lg Electronics Inc A method of making a thin-film transistor
GB2338105B (en) * 1997-03-04 2000-04-12 Lg Electronics Inc Method of making a thin film transistor
USRE45841E1 (en) 1997-03-04 2016-01-12 Lg Display Co., Ltd. Thin-film transistor and method of making same
USRE45579E1 (en) 1997-03-04 2015-06-23 Lg Display Co., Ltd. Thin-film transistor and method of making same
US7176489B2 (en) 1997-03-04 2007-02-13 Lg. Philips Lcd. Co., Ltd. Thin-film transistor and method of making same
GB2322968A (en) * 1997-03-04 1998-09-09 Lg Electronics Inc Thin-film transistor and method of making same
US6815321B2 (en) 1997-03-04 2004-11-09 Lg. Philips Lcd Co., Ltd. Thin-film transistor and method of making same
US6573127B2 (en) 1997-08-26 2003-06-03 Lg Electronics Inc. Thin-film transistor and method of making same
GB2328793B (en) * 1997-08-26 2000-06-07 Lg Electronics Inc Thin-film transistor and method of making same
US6333518B1 (en) 1997-08-26 2001-12-25 Lg Electronics Inc. Thin-film transistor and method of making same
GB2328793A (en) * 1997-08-26 1999-03-03 Lg Electronics Inc Thin-film transistor and method of making same

Also Published As

Publication number Publication date
WO1992006497A1 (en) 1992-04-16
JPH04505830A (en) 1992-10-08
GB9209424D0 (en) 1992-07-22
DE4192352T (en) 1992-10-08

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)