GB9209424D0 - Positive control of the source/drain-gate overlap in self-aligned tfts via a top hat gate electrode configuration - Google Patents

Positive control of the source/drain-gate overlap in self-aligned tfts via a top hat gate electrode configuration

Info

Publication number
GB9209424D0
GB9209424D0 GB929209424A GB9209424A GB9209424D0 GB 9209424 D0 GB9209424 D0 GB 9209424D0 GB 929209424 A GB929209424 A GB 929209424A GB 9209424 A GB9209424 A GB 9209424A GB 9209424 D0 GB9209424 D0 GB 9209424D0
Authority
GB
United Kingdom
Prior art keywords
drain
self
source
positive control
electrode configuration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB929209424A
Other versions
GB2254187A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB9209424D0 publication Critical patent/GB9209424D0/en
Publication of GB2254187A publication Critical patent/GB2254187A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
GB9209424A 1990-10-05 1992-04-30 Positive control of the source/drain-gate overlap in self-aligned tfts via a top hat gate electrode configuration Withdrawn GB2254187A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59342390A 1990-10-05 1990-10-05
PCT/US1991/007335 WO1992006497A1 (en) 1990-10-05 1991-10-02 Positive control of the source/drain-gate overlap in self-aligned tfts via a top hat gate electrode configuration

Publications (2)

Publication Number Publication Date
GB9209424D0 true GB9209424D0 (en) 1992-07-22
GB2254187A GB2254187A (en) 1992-09-30

Family

ID=24374648

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9209424A Withdrawn GB2254187A (en) 1990-10-05 1992-04-30 Positive control of the source/drain-gate overlap in self-aligned tfts via a top hat gate electrode configuration

Country Status (4)

Country Link
JP (1) JPH04505830A (en)
DE (1) DE4192352T (en)
GB (1) GB2254187A (en)
WO (1) WO1992006497A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2965283B2 (en) * 1994-07-13 1999-10-18 ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド Method for manufacturing thin film transistor
KR100248123B1 (en) 1997-03-04 2000-03-15 구본준 Thin-film transistor and method for manufacturing thereof
GB2338105B (en) * 1997-03-04 2000-04-12 Lg Electronics Inc Method of making a thin film transistor
KR100392909B1 (en) 1997-08-26 2004-03-22 엘지.필립스 엘시디 주식회사 Thin film transistor and manufacturing method thereof
FR2761809B1 (en) * 1997-03-04 2002-03-01 Lg Electronics Inc THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
KR100430950B1 (en) * 1998-09-01 2004-06-16 엘지.필립스 엘시디 주식회사 Thin film transistor and its manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3279239D1 (en) * 1981-07-27 1988-12-29 Toshiba Kk Thin-film transistor and method of manufacture therefor
US4651185A (en) * 1983-08-15 1987-03-17 Alphasil, Inc. Method of manufacturing thin film transistors and transistors made thereby
JPS62239579A (en) * 1986-04-10 1987-10-20 Alps Electric Co Ltd Manufacture of thin film transistor
EP0270323B1 (en) * 1986-11-29 1999-11-03 Sharp Kabushiki Kaisha Method of manufacture of a thin-film transistor
US4767723A (en) * 1987-10-30 1988-08-30 International Business Machines Corporation Process for making self-aligning thin film transistors

Also Published As

Publication number Publication date
GB2254187A (en) 1992-09-30
DE4192352T (en) 1992-10-08
WO1992006497A1 (en) 1992-04-16
JPH04505830A (en) 1992-10-08

Similar Documents

Publication Publication Date Title
HK1009618A1 (en) Fet amplifier with gate voltage control
SG52400A1 (en) Short channel trenched dmos transistor
EP0514060A3 (en) Dmos transistor structure & method
DE69428894T2 (en) Bipolar transistor with isolated control electrode
SG46713A1 (en) Improved gate valve
AU6931091A (en) Animal feeder with adjustable gate
GB2281150B (en) Insulated gate bipolar transistor
GB9209424D0 (en) Positive control of the source/drain-gate overlap in self-aligned tfts via a top hat gate electrode configuration
GB2255228B (en) Insulated gate bipolar transistor
EP0338312A3 (en) Insulated gate bipolar transistor
GB2254733B (en) Diamond schottky gate-type field effect transistor
GB9623879D0 (en) Insulated gate bipolar transistor with integrated control
EP0493937A3 (en) Gate array with built-in programming circuitry
EP0478004A3 (en) Insulated gate transistor operable at a low drain-source voltage
GB8927027D0 (en) Heterojunction confined channel fet
HK1007632A1 (en) Low output-capacity double-diffused field effect transistor
EP0463511A3 (en) Split gate eprom cell using polysilicon spacers
GB2236881B (en) Improved synapse cell employing dual gate transistor structure
GB9127093D0 (en) Field-effect transistor
GB2221240B (en) Gate
GB2258564B (en) Insulated gate bipolar transistor
AU5360290A (en) Adjustable double gate closure device
EP0439751A3 (en) Superconductor gate field effect transistor
EP0486063A3 (en) Field-effect transistor
NZ216175A (en) Irrigation gate controller

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)