GB2258564B - Insulated gate bipolar transistor - Google Patents

Insulated gate bipolar transistor

Info

Publication number
GB2258564B
GB2258564B GB9216139A GB9216139A GB2258564B GB 2258564 B GB2258564 B GB 2258564B GB 9216139 A GB9216139 A GB 9216139A GB 9216139 A GB9216139 A GB 9216139A GB 2258564 B GB2258564 B GB 2258564B
Authority
GB
United Kingdom
Prior art keywords
bipolar transistor
insulated gate
gate bipolar
insulated
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9216139A
Other versions
GB9216139D0 (en
GB2258564A (en
Inventor
Noriyuki Iwamuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of GB9216139D0 publication Critical patent/GB9216139D0/en
Publication of GB2258564A publication Critical patent/GB2258564A/en
Application granted granted Critical
Publication of GB2258564B publication Critical patent/GB2258564B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
GB9216139A 1991-08-06 1992-07-29 Insulated gate bipolar transistor Expired - Fee Related GB2258564B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3195592A JPH0541524A (en) 1991-08-06 1991-08-06 Insulated-gate bipolar transistor

Publications (3)

Publication Number Publication Date
GB9216139D0 GB9216139D0 (en) 1992-09-09
GB2258564A GB2258564A (en) 1993-02-10
GB2258564B true GB2258564B (en) 1994-12-21

Family

ID=16343715

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9216139A Expired - Fee Related GB2258564B (en) 1991-08-06 1992-07-29 Insulated gate bipolar transistor

Country Status (3)

Country Link
JP (1) JPH0541524A (en)
DE (1) DE4225738A1 (en)
GB (1) GB2258564B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09172167A (en) * 1995-12-19 1997-06-30 Toshiba Corp Semiconductor device
JP2010010401A (en) * 2008-06-27 2010-01-14 Hitachi Ltd Horizontal igbt and motor controller using the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2150753A (en) * 1983-11-30 1985-07-03 Toshiba Kk Semiconductor device
EP0327316A2 (en) * 1988-02-04 1989-08-09 Kabushiki Kaisha Toshiba Semiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each other
EP0365107A2 (en) * 1988-10-19 1990-04-25 Kabushiki Kaisha Toshiba Manufacturing method for vertically conductive semiconductor devices
US4990975A (en) * 1988-12-16 1991-02-05 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4114349C2 (en) * 1990-05-10 2001-05-31 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor (IGBT)

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2150753A (en) * 1983-11-30 1985-07-03 Toshiba Kk Semiconductor device
EP0327316A2 (en) * 1988-02-04 1989-08-09 Kabushiki Kaisha Toshiba Semiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each other
EP0365107A2 (en) * 1988-10-19 1990-04-25 Kabushiki Kaisha Toshiba Manufacturing method for vertically conductive semiconductor devices
US4990975A (en) * 1988-12-16 1991-02-05 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same

Also Published As

Publication number Publication date
GB9216139D0 (en) 1992-09-09
JPH0541524A (en) 1993-02-19
GB2258564A (en) 1993-02-10
DE4225738A1 (en) 1993-02-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030729