EP0450082A4 - Insulated gate bipolar transistor - Google Patents

Insulated gate bipolar transistor

Info

Publication number
EP0450082A4
EP0450082A4 EP19900912955 EP90912955A EP0450082A4 EP 0450082 A4 EP0450082 A4 EP 0450082A4 EP 19900912955 EP19900912955 EP 19900912955 EP 90912955 A EP90912955 A EP 90912955A EP 0450082 A4 EP0450082 A4 EP 0450082A4
Authority
EP
European Patent Office
Prior art keywords
bipolar transistor
insulated gate
gate bipolar
insulated
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19900912955
Other versions
EP0450082A1 (en
EP0450082B1 (en
Inventor
Norihito 3-6 Aza Ikewaki Hane-Cho Tokura
Naoto 14-3 Ooaza Morioka Aza Shinyashiki Okabe
Naohito 62-5 Ushiroda Tsuiji-Cho Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Publication of EP0450082A1 publication Critical patent/EP0450082A1/en
Publication of EP0450082A4 publication Critical patent/EP0450082A4/en
Application granted granted Critical
Publication of EP0450082B1 publication Critical patent/EP0450082B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
EP90912955A 1989-08-31 1990-08-29 Insulated gate bipolar transistor Expired - Lifetime EP0450082B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP22626289 1989-08-31
JP22626289 1989-08-31
JP226262/89 1989-08-31
PCT/JP1990/001091 WO1991003842A1 (en) 1989-08-31 1990-08-29 Insulated gate bipolar transistor

Publications (3)

Publication Number Publication Date
EP0450082A1 EP0450082A1 (en) 1991-10-09
EP0450082A4 true EP0450082A4 (en) 1992-05-06
EP0450082B1 EP0450082B1 (en) 2004-04-28

Family

ID=16842446

Family Applications (1)

Application Number Title Priority Date Filing Date
EP90912955A Expired - Lifetime EP0450082B1 (en) 1989-08-31 1990-08-29 Insulated gate bipolar transistor

Country Status (4)

Country Link
US (1) US5519245A (en)
EP (1) EP0450082B1 (en)
DE (1) DE69034136T2 (en)
WO (1) WO1991003842A1 (en)

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JP2858404B2 (en) * 1990-06-08 1999-02-17 株式会社デンソー Insulated gate bipolar transistor and method of manufacturing the same
JP2862027B2 (en) * 1991-03-12 1999-02-24 株式会社デンソー Insulated gate bipolar transistor
US5475243A (en) * 1991-07-02 1995-12-12 Fuji Electric Co., Ltd. Semiconductor device including an IGBT and a current-regenerative diode
JP3081739B2 (en) * 1992-10-20 2000-08-28 三菱電機株式会社 Insulated gate semiconductor device and method of manufacturing the same
US5719412A (en) * 1993-04-02 1998-02-17 Nippondenso Co., Ltd Insulated gate bipolar transistor
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US5723882A (en) * 1994-03-10 1998-03-03 Nippondenso Co., Ltd. Insulated gate field effect transistor having guard ring regions
JP3355851B2 (en) * 1995-03-07 2002-12-09 株式会社デンソー Insulated gate field effect transistor and method of manufacturing the same
JP3918209B2 (en) 1996-09-11 2007-05-23 株式会社デンソー Insulated gate bipolar transistor and manufacturing method thereof
EP0845813A1 (en) 1996-12-02 1998-06-03 Zetex Plc Insulated gate bipolar transistor
US6081009A (en) * 1997-11-10 2000-06-27 Intersil Corporation High voltage mosfet structure
US6576936B1 (en) 1998-02-27 2003-06-10 Abb (Schweiz) Ag Bipolar transistor with an insulated gate electrode
DE19823170A1 (en) * 1998-05-23 1999-11-25 Asea Brown Boveri Bipolar transistor with insulated gate electrode
EP1022785B1 (en) * 1999-01-25 2006-04-05 STMicroelectronics S.r.l. Electronic semiconductor power device with integrated diode
US6461918B1 (en) 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
US7745289B2 (en) * 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6696726B1 (en) * 2000-08-16 2004-02-24 Fairchild Semiconductor Corporation Vertical MOSFET with ultra-low resistance and low gate charge
US6803626B2 (en) * 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6916745B2 (en) * 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6818513B2 (en) * 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6710403B2 (en) * 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
FI120310B (en) * 2001-02-13 2009-09-15 Valtion Teknillinen An improved method for producing secreted proteins in fungi
DE10147307A1 (en) * 2001-09-26 2003-04-24 Infineon Technologies Ag Semiconductor device functioning as IGBT with integrated free-running diode has connection zone at edge of semiconductor body, more heavily doped than drift zone
US7061066B2 (en) * 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
KR100859701B1 (en) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 High voltage LDMOS transistor and method for fabricating the same
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7033891B2 (en) * 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
ATE418793T1 (en) * 2003-02-18 2009-01-15 Nxp Bv SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING SUCH A COMPONENT
US7638841B2 (en) * 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
KR100994719B1 (en) * 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 Superjunction semiconductor device
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US20050199918A1 (en) * 2004-03-15 2005-09-15 Daniel Calafut Optimized trench power MOSFET with integrated schottky diode
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
US7504306B2 (en) 2005-04-06 2009-03-17 Fairchild Semiconductor Corporation Method of forming trench gate field effect transistor with recessed mesas
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US7944018B2 (en) * 2006-08-14 2011-05-17 Icemos Technology Ltd. Semiconductor devices with sealed, unlined trenches and methods of forming same
US8580651B2 (en) * 2007-04-23 2013-11-12 Icemos Technology Ltd. Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
US7723172B2 (en) * 2007-04-23 2010-05-25 Icemos Technology Ltd. Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
US20080272429A1 (en) * 2007-05-04 2008-11-06 Icemos Technology Corporation Superjunction devices having narrow surface layout of terminal structures and methods of manufacturing the devices
WO2009039441A1 (en) 2007-09-21 2009-03-26 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8012806B2 (en) * 2007-09-28 2011-09-06 Icemos Technology Ltd. Multi-directional trenching of a die in manufacturing superjunction devices
JP5332175B2 (en) 2007-10-24 2013-11-06 富士電機株式会社 Semiconductor device provided with control circuit
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US7846821B2 (en) * 2008-02-13 2010-12-07 Icemos Technology Ltd. Multi-angle rotation for ion implantation of trenches in superjunction devices
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8946814B2 (en) 2012-04-05 2015-02-03 Icemos Technology Ltd. Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates
GB2586599A (en) * 2019-08-27 2021-03-03 Mqsemi Ag Electrically shorted PN junctions and functional semiconductor designs for the same

Citations (2)

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Publication number Priority date Publication date Assignee Title
EP0338312A2 (en) * 1988-04-01 1989-10-25 Hitachi, Ltd. Insulated gate bipolar transistor
EP0380249A2 (en) * 1989-01-21 1990-08-01 LUCAS INDUSTRIES public limited company Insulated gate bipolar transistor

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Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
EP0338312A2 (en) * 1988-04-01 1989-10-25 Hitachi, Ltd. Insulated gate bipolar transistor
EP0380249A2 (en) * 1989-01-21 1990-08-01 LUCAS INDUSTRIES public limited company Insulated gate bipolar transistor

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
INTERNATIONAL ELECTRON DEVICES MEETING, HELD IN WASHINGTON, D.C., TECHNICAL DIGEST. December 1987, NEW YORK, US; pages 670 - 673; (T. P. CHOW ET AL.): 'P-channel, vertical insulated gate bipolar transistors with collector short' *
PATENT ABSTRACTS OF JAPAN vol. 12, no. 318 (E-650)(3165) 29 August 1988 & JP-A-63 081 861 ( MITSUBISHI ELECTRIC CORP. ) 12 April 1988 *
PATENT ABSTRACTS OF JAPAN vol. 12, no. 80 (E-590)(2927) 12 March 1988 & JP-A-62 219 667 ( MATSUSHITA ELECTRONICS CORP. ) 26 September 1987 *
See also references of WO9103842A1 *

Also Published As

Publication number Publication date
US5519245A (en) 1996-05-21
WO1991003842A1 (en) 1991-03-21
DE69034136D1 (en) 2004-06-03
DE69034136T2 (en) 2005-01-20
EP0450082A1 (en) 1991-10-09
EP0450082B1 (en) 2004-04-28

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