JPS6115370A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6115370A
JPS6115370A JP13590484A JP13590484A JPS6115370A JP S6115370 A JPS6115370 A JP S6115370A JP 13590484 A JP13590484 A JP 13590484A JP 13590484 A JP13590484 A JP 13590484A JP S6115370 A JPS6115370 A JP S6115370A
Authority
JP
Japan
Prior art keywords
layer
lt
gt
formed
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13590484A
Other versions
JPH0550866B2 (en
Inventor
Akio Nakagawa
Hiromichi Ohashi
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59135904A priority Critical patent/JPH0550866B2/ja
Priority claimed from GB8430147A external-priority patent/GB2150753B/en
Publication of JPS6115370A publication Critical patent/JPS6115370A/en
Priority claimed from US07/807,752 external-priority patent/US5212396A/en
Publication of JPH0550866B2 publication Critical patent/JPH0550866B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47Schottky barrier electrodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395Vertical transistors, e.g. vertical IGBT

Abstract

PURPOSE:To realize conduction modulating type MOSFETs with the built-in reverse conductive diode by a method wherein the first semiconductive layer on the drain electrode side is partly substituted with the sixth semiconductor layer of reverse conductivity type. CONSTITUTION:An n<+> layer (second semiconductor layer) and a p<+> layer 11 (first semiconductor layer) are formed on one side of an n<-> layer 12 (third semiconductor layer), and a p<+> layer 13 (fourth semiconductor layer) is formed on the other side. Next, an n<+> layer (fifth semiconductor layer) serving as the source is formed in the p<+> layer 13. Besides, an n<+> layer 19a (sixth semiconductor layer) serving as the cathode of a reverse conductive diode is formed in the region of the n<+> layer 19 where a p<+> layer 11 is not formed. After successive formation of a gate insulation film 15, a gate electrode 16 and a source electrode 17 are formed to an n<+> layer 14 and a p<+> layer 13 and a drain electrode 18 is formed on the wafer back. This manner can yield the conduction modulating type MOSFET with the built-in reverse conductive diode B'.
JP59135904A 1984-06-30 1984-06-30 Expired - Lifetime JPH0550866B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59135904A JPH0550866B2 (en) 1984-06-30 1984-06-30

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP59135904A JPH0550866B2 (en) 1984-06-30 1984-06-30
GB8430147A GB2150753B (en) 1983-11-30 1984-11-29 Semiconductor device
DE19843443854 DE3443854C2 (en) 1983-11-30 1984-11-30
US06/858,854 US4689647A (en) 1983-11-30 1986-04-30 Conductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrations
US07/807,752 US5212396A (en) 1983-11-30 1991-12-17 Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations

Publications (2)

Publication Number Publication Date
JPS6115370A true JPS6115370A (en) 1986-01-23
JPH0550866B2 JPH0550866B2 (en) 1993-07-30

Family

ID=15162540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59135904A Expired - Lifetime JPH0550866B2 (en) 1984-06-30 1984-06-30

Country Status (1)

Country Link
JP (1) JPH0550866B2 (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124178A (en) * 1984-11-20 1986-06-11 Mitsubishi Electric Corp Field effect semiconductor device
JPS63150970A (en) * 1986-12-15 1988-06-23 Fuji Electric Co Ltd Conductivity modulation type insulated gate transistor
JPS63211680A (en) * 1987-02-26 1988-09-02 Toshiba Corp Semiconductor device and manufacture thereof
JPS63260174A (en) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPS63260175A (en) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPH02126682A (en) * 1988-11-07 1990-05-15 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPH02281737A (en) * 1989-04-24 1990-11-19 Toshiba Corp Solder bump type semiconductor device
JPH02309676A (en) * 1989-05-24 1990-12-25 Meidensha Corp Reverse-conducting insulated-gate bipolar transistor
US5519245A (en) * 1989-08-31 1996-05-21 Nippondenso Co., Ltd. Insulated gate bipolar transistor with reverse conducting current
JP2006520103A (en) * 2003-03-10 2006-08-31 フェアチャイルド・セミコンダクター・コーポレーション Flip chip coated metal stud bumps made of coated wire
JP2007129195A (en) * 2005-10-05 2007-05-24 Sanken Electric Co Ltd Semiconductor device
JP2007134714A (en) * 2005-11-09 2007-05-31 Infineon Technologies Ag Power igbt with high intensity
JP2007184486A (en) * 2006-01-10 2007-07-19 Denso Corp Semiconductor device
JP2009010414A (en) * 2008-08-26 2009-01-15 Mitsubishi Electric Corp Power semiconductor device
JP2009194330A (en) 2008-02-18 2009-08-27 Mitsubishi Electric Corp Semiconductor device and its manufacturing method
JP2010087510A (en) * 2008-09-30 2010-04-15 Infineon Technologies Austria Ag Robust semiconductor device
US8039879B2 (en) 2007-10-24 2011-10-18 Fuji Electric Co., Ltd. Semiconductor device having a control circuit and method of its manufacture
JP2013247248A (en) * 2012-05-25 2013-12-09 Fuji Electric Co Ltd Semiconductor device manufacturing method
JP2015008235A (en) * 2013-06-25 2015-01-15 富士電機株式会社 Method of manufacturing semiconductor device
WO2016110953A1 (en) * 2015-01-07 2016-07-14 三菱電機株式会社 Silicon carbide semiconductor device and manufacturing method therefor
US9478647B2 (en) 2014-11-13 2016-10-25 Mitsubishi Electric Corporation Semiconductor device
JP2016189465A (en) * 2015-03-27 2016-11-04 インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag Bipolar transistor device with emitter having two types of emitter regions

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
JPS58124275A (en) * 1982-01-12 1983-07-23 Siemens Ag Mis field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
JPS58124275A (en) * 1982-01-12 1983-07-23 Siemens Ag Mis field effect transistor

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124178A (en) * 1984-11-20 1986-06-11 Mitsubishi Electric Corp Field effect semiconductor device
JPS63150970A (en) * 1986-12-15 1988-06-23 Fuji Electric Co Ltd Conductivity modulation type insulated gate transistor
JPS63211680A (en) * 1987-02-26 1988-09-02 Toshiba Corp Semiconductor device and manufacture thereof
JPS63260174A (en) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPS63260175A (en) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd Manufacture of semiconductor device
US5086324A (en) * 1988-07-11 1992-02-04 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor
JPH02126682A (en) * 1988-11-07 1990-05-15 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPH02281737A (en) * 1989-04-24 1990-11-19 Toshiba Corp Solder bump type semiconductor device
JPH02309676A (en) * 1989-05-24 1990-12-25 Meidensha Corp Reverse-conducting insulated-gate bipolar transistor
US5519245A (en) * 1989-08-31 1996-05-21 Nippondenso Co., Ltd. Insulated gate bipolar transistor with reverse conducting current
JP2006520103A (en) * 2003-03-10 2006-08-31 フェアチャイルド・セミコンダクター・コーポレーション Flip chip coated metal stud bumps made of coated wire
US7932171B2 (en) 2003-03-10 2011-04-26 Fairchild Semiconductor Corporation Dual metal stud bumping for flip chip applications
JP2007129195A (en) * 2005-10-05 2007-05-24 Sanken Electric Co Ltd Semiconductor device
JP2007134714A (en) * 2005-11-09 2007-05-31 Infineon Technologies Ag Power igbt with high intensity
JP2007184486A (en) * 2006-01-10 2007-07-19 Denso Corp Semiconductor device
US8039879B2 (en) 2007-10-24 2011-10-18 Fuji Electric Co., Ltd. Semiconductor device having a control circuit and method of its manufacture
JP2009194330A (en) 2008-02-18 2009-08-27 Mitsubishi Electric Corp Semiconductor device and its manufacturing method
JP2009010414A (en) * 2008-08-26 2009-01-15 Mitsubishi Electric Corp Power semiconductor device
JP2010087510A (en) * 2008-09-30 2010-04-15 Infineon Technologies Austria Ag Robust semiconductor device
US8828810B2 (en) 2008-09-30 2014-09-09 Infineon Technologies Austria Ag Method of producing a semiconductor including two differently doped semiconductor zones
JP2013247248A (en) * 2012-05-25 2013-12-09 Fuji Electric Co Ltd Semiconductor device manufacturing method
JP2015008235A (en) * 2013-06-25 2015-01-15 富士電機株式会社 Method of manufacturing semiconductor device
US9478647B2 (en) 2014-11-13 2016-10-25 Mitsubishi Electric Corporation Semiconductor device
WO2016110953A1 (en) * 2015-01-07 2016-07-14 三菱電機株式会社 Silicon carbide semiconductor device and manufacturing method therefor
JPWO2016110953A1 (en) * 2015-01-07 2017-04-27 三菱電機株式会社 Silicon carbide semiconductor device and manufacturing method thereof
US10164083B2 (en) 2015-01-07 2018-12-25 Mitsubishi Electric Corporation Silicon carbide semiconductor device and manufacturing method therefor
JP2016189465A (en) * 2015-03-27 2016-11-04 インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag Bipolar transistor device with emitter having two types of emitter regions
US10224206B2 (en) 2015-03-27 2019-03-05 Infineon Technologies Ag Bipolar transistor device with an emitter having two types of emitter regions

Also Published As

Publication number Publication date
JPH0550866B2 (en) 1993-07-30

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term