GB2002583A - Field-effect semiconductor device - Google Patents

Field-effect semiconductor device

Info

Publication number
GB2002583A
GB2002583A GB7832529A GB7832529A GB2002583A GB 2002583 A GB2002583 A GB 2002583A GB 7832529 A GB7832529 A GB 7832529A GB 7832529 A GB7832529 A GB 7832529A GB 2002583 A GB2002583 A GB 2002583A
Authority
GB
United Kingdom
Prior art keywords
field
connection
electrode
channel
field control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7832529A
Other versions
GB2002583B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB7832529A priority Critical patent/GB2002583B/en
Publication of GB2002583A publication Critical patent/GB2002583A/en
Application granted granted Critical
Publication of GB2002583B publication Critical patent/GB2002583B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

A field-effect semiconductor device wherein the input and output regions e.g. source (29) and drain (31) of a MOSFET are spaced from a surrounding channel-stop region (15) to increase device breakdown voltage, and undesirable spurious transistor action under an electrical connection (19'', 19''') to an electrode, e.g. gate (19') of the MOSFET, controlling the field in the channel region of the device is avoided by arranging for the connection (19'', 19''') to extend from the field control electrode (19') to a thick insulating layer (13) overlying the channel-stop region (15) by way of a layer (9, 11) of insulating material whose thickness and material are such that said connection (19'', 19''') constitutes an extension of the field control electrode (19') in respect of control of flow of electric current between the source and drain regions (29, 31). The insulating material (9, 11) underlying the connection (19'', 19''') is preferably an extension of the field control dielectric (9, 11). The device also includes a CCD with an electrode structure 21 and input and output regions 27, 29. A method of manufacturing the device is also disclosed. <IMAGE>
GB7832529A 1977-08-09 1978-08-08 Field-effect semiconductor devices Expired GB2002583B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7832529A GB2002583B (en) 1977-08-09 1978-08-08 Field-effect semiconductor devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB3338177 1977-08-09
GB7832529A GB2002583B (en) 1977-08-09 1978-08-08 Field-effect semiconductor devices

Publications (2)

Publication Number Publication Date
GB2002583A true GB2002583A (en) 1979-02-21
GB2002583B GB2002583B (en) 1982-02-10

Family

ID=26261848

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7832529A Expired GB2002583B (en) 1977-08-09 1978-08-08 Field-effect semiconductor devices

Country Status (1)

Country Link
GB (1) GB2002583B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404579A (en) * 1980-10-28 1983-09-13 Inc. Motorola Semiconductor device having reduced capacitance and method of fabrication thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404579A (en) * 1980-10-28 1983-09-13 Inc. Motorola Semiconductor device having reduced capacitance and method of fabrication thereof

Also Published As

Publication number Publication date
GB2002583B (en) 1982-02-10

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee