JPS5788774A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5788774A
JPS5788774A JP55164543A JP16454380A JPS5788774A JP S5788774 A JPS5788774 A JP S5788774A JP 55164543 A JP55164543 A JP 55164543A JP 16454380 A JP16454380 A JP 16454380A JP S5788774 A JPS5788774 A JP S5788774A
Authority
JP
Japan
Prior art keywords
gate
capacitor
electrostatic breakdown
output
interposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55164543A
Other languages
Japanese (ja)
Other versions
JPH0478022B2 (en
Inventor
Noboru Miyamoto
Eiichiro Sato
Mitsunori Karasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55164543A priority Critical patent/JPS5788774A/en
Publication of JPS5788774A publication Critical patent/JPS5788774A/en
Publication of JPH0478022B2 publication Critical patent/JPH0478022B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Abstract

PURPOSE:To prevent electrostatic breakdown by a semiconductor device without reducing output level and without increasing the occupying area of chip by a method wherein a capacitor utilizing line capacity of multilayer wiring is added for prevention of electrostatic breakdown between a gate and the output part of an output stage MOS structure. CONSTITUTION:The gate electrode 3 is formed on an Si substrate 1 interposing a gate insulating film 2 between them, and moreover the upper part of the gate electrode 3 is made as to be covered with a drain electrode 5 interposing an interlayer insulating film 4 between them to form a capacitor C1. When electrostatic input E is applied to the drain of a buffer for output of the output stage MOSFET constituted by this way, electric potential of the gate is made to rise by division of capacitance with a capacitor C2 between the substrate-gate and the capacitor C1, a time constant to make electric charge of the gate to be discharged through a prebuffer DMOSFET is formed, and prevention of electrostatic breakdown can be enabled. Accordingly electrostatic breakdown can be prevented effectively without reducing output level, and without increasing the occupying area of chipe.
JP55164543A 1980-11-25 1980-11-25 Semiconductor device Granted JPS5788774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55164543A JPS5788774A (en) 1980-11-25 1980-11-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55164543A JPS5788774A (en) 1980-11-25 1980-11-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5788774A true JPS5788774A (en) 1982-06-02
JPH0478022B2 JPH0478022B2 (en) 1992-12-10

Family

ID=15795149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55164543A Granted JPS5788774A (en) 1980-11-25 1980-11-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5788774A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4636833A (en) * 1983-03-18 1987-01-13 Hitachi, Ltd. Semiconductor device
JPS62219959A (en) * 1986-03-20 1987-09-28 Fujitsu Ltd Mos integrated circuit
US4786881A (en) * 1987-08-27 1988-11-22 General Electric Company Amplifier with integrated feedback network
JPH08298292A (en) * 1996-06-14 1996-11-12 Matsushita Electron Corp Semiconductor integrated circuit
JP2007273689A (en) * 2006-03-31 2007-10-18 Denso Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5369589A (en) * 1976-12-03 1978-06-21 Mitsubishi Electric Corp Insulating gate type field effect transistor with protective device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5369589A (en) * 1976-12-03 1978-06-21 Mitsubishi Electric Corp Insulating gate type field effect transistor with protective device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4636833A (en) * 1983-03-18 1987-01-13 Hitachi, Ltd. Semiconductor device
JPS62219959A (en) * 1986-03-20 1987-09-28 Fujitsu Ltd Mos integrated circuit
US4786881A (en) * 1987-08-27 1988-11-22 General Electric Company Amplifier with integrated feedback network
JPH08298292A (en) * 1996-06-14 1996-11-12 Matsushita Electron Corp Semiconductor integrated circuit
JP2007273689A (en) * 2006-03-31 2007-10-18 Denso Corp Semiconductor device

Also Published As

Publication number Publication date
JPH0478022B2 (en) 1992-12-10

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