JPS5762564A - Tunnel effect type protecting device - Google Patents

Tunnel effect type protecting device

Info

Publication number
JPS5762564A
JPS5762564A JP55137383A JP13738380A JPS5762564A JP S5762564 A JPS5762564 A JP S5762564A JP 55137383 A JP55137383 A JP 55137383A JP 13738380 A JP13738380 A JP 13738380A JP S5762564 A JPS5762564 A JP S5762564A
Authority
JP
Japan
Prior art keywords
film
gate
tunnel
effect type
protecting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55137383A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55137383A priority Critical patent/JPS5762564A/en
Publication of JPS5762564A publication Critical patent/JPS5762564A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To obtain the protective device for an MIS type semiconductor device having fast responding speed by forming a think tunnel barrier connected to the gate electrode of the MIS type semiconductor device. CONSTITUTION:A source 2 and a drain 3 are formed on the main surface of a P type Si substrate 1, a polycrystalline Si gate 5 is formed via the first dielectric film 4, the second dielectric film 6 becoming a tunnel barier film is further formed, an electrode 7 is formed thereon, is connected to the gate 5, and is connected to an input terminal 7a. The overvoltage input from the input terminal 7a is passed from the film 6 through the tunnel substrate 1 in the region 7 before it is transmitted to and filled in the gate region 5, thereby preventing the insulation breakdown of the film 4.
JP55137383A 1980-09-30 1980-09-30 Tunnel effect type protecting device Pending JPS5762564A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55137383A JPS5762564A (en) 1980-09-30 1980-09-30 Tunnel effect type protecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55137383A JPS5762564A (en) 1980-09-30 1980-09-30 Tunnel effect type protecting device

Publications (1)

Publication Number Publication Date
JPS5762564A true JPS5762564A (en) 1982-04-15

Family

ID=15197396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55137383A Pending JPS5762564A (en) 1980-09-30 1980-09-30 Tunnel effect type protecting device

Country Status (1)

Country Link
JP (1) JPS5762564A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125654A (en) * 1983-01-05 1984-07-20 Nec Kyushu Ltd Semiconductor device
JPS61231753A (en) * 1985-04-08 1986-10-16 Nec Corp Mis-type dynamic random access memory device
JPS62208660A (en) * 1986-03-03 1987-09-12 Fujitsu Ltd Dynamic random access memory
US5543649A (en) * 1994-03-02 1996-08-06 Samsung Electronics Co., Ltd. Electrostatic discharge protection device for a semiconductor circuit
KR100512237B1 (en) * 1996-11-08 2005-11-28 소니 가부시끼 가이샤 Semiconductor apparatus, manufacturing method therefor, solid state image device and manufacturing method therefor
JP2007067347A (en) * 2005-09-02 2007-03-15 Toshiba Corp Semiconductor device and manufacturing method thereof
US7851891B2 (en) 2003-01-14 2010-12-14 Panasonic Corporation Semiconductor device and method for fabricating the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953779A (en) * 1972-09-28 1974-05-24
JPS5462787A (en) * 1977-10-28 1979-05-21 Agency Of Ind Science & Technol Semiconductor device and integrated circuit of the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953779A (en) * 1972-09-28 1974-05-24
JPS5462787A (en) * 1977-10-28 1979-05-21 Agency Of Ind Science & Technol Semiconductor device and integrated circuit of the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125654A (en) * 1983-01-05 1984-07-20 Nec Kyushu Ltd Semiconductor device
JPS61231753A (en) * 1985-04-08 1986-10-16 Nec Corp Mis-type dynamic random access memory device
JPS62208660A (en) * 1986-03-03 1987-09-12 Fujitsu Ltd Dynamic random access memory
US5543649A (en) * 1994-03-02 1996-08-06 Samsung Electronics Co., Ltd. Electrostatic discharge protection device for a semiconductor circuit
KR100512237B1 (en) * 1996-11-08 2005-11-28 소니 가부시끼 가이샤 Semiconductor apparatus, manufacturing method therefor, solid state image device and manufacturing method therefor
US7851891B2 (en) 2003-01-14 2010-12-14 Panasonic Corporation Semiconductor device and method for fabricating the same
JP2007067347A (en) * 2005-09-02 2007-03-15 Toshiba Corp Semiconductor device and manufacturing method thereof
JP4625738B2 (en) * 2005-09-02 2011-02-02 株式会社東芝 Semiconductor device and manufacturing method thereof

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