JPS5724566A - Protective circuit for mos type gate - Google Patents

Protective circuit for mos type gate

Info

Publication number
JPS5724566A
JPS5724566A JP10034580A JP10034580A JPS5724566A JP S5724566 A JPS5724566 A JP S5724566A JP 10034580 A JP10034580 A JP 10034580A JP 10034580 A JP10034580 A JP 10034580A JP S5724566 A JPS5724566 A JP S5724566A
Authority
JP
Japan
Prior art keywords
breakdown voltage
type
overvoltage
layers
mos type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10034580A
Other languages
Japanese (ja)
Inventor
Hiroshige Goto
Koichi Sekine
Tetsuo Yamada
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10034580A priority Critical patent/JPS5724566A/en
Publication of JPS5724566A publication Critical patent/JPS5724566A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To protect an MOS type gate from an overvoltage and to improve the degree of integration without using any field plate, by selecting the breakdown voltage due to the connection of the depletion layers at a protective P-N junction so as to be lower than the insulation breakdown voltage of the gate electrode. CONSTITUTION:N type source and drain regions 16, 17 are formed in a P type region 13 prvided on an N type Si substrate 12, as well as an N type region 18 is formed, and the distance L between the region 18 and the substrate and the impurity density are so set that the voltage (the breakdown voltage of an overvoltage preventing circuit ) at which the deplation layer generated at the P-N junction between the layers 13-18 connects with the depletion layer generated at the interface of the layers 12, 13 is made smaller than the insulation breakdown voltage of a gate electrode 15. Accordingly, it is protected from an overvoltage without the need for any field plates, and the degree of integration is improved.
JP10034580A 1980-07-22 1980-07-22 Protective circuit for mos type gate Pending JPS5724566A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10034580A JPS5724566A (en) 1980-07-22 1980-07-22 Protective circuit for mos type gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10034580A JPS5724566A (en) 1980-07-22 1980-07-22 Protective circuit for mos type gate

Publications (1)

Publication Number Publication Date
JPS5724566A true JPS5724566A (en) 1982-02-09

Family

ID=14271520

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10034580A Pending JPS5724566A (en) 1980-07-22 1980-07-22 Protective circuit for mos type gate

Country Status (1)

Country Link
JP (1) JPS5724566A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474464A (en) * 1990-07-16 1992-03-09 Matsushita Electron Corp Semiconductor device
US5199846A (en) * 1990-10-22 1993-04-06 Hitachi, Ltd. Centrifugal fan with noise suppressing arrangement
US5336046A (en) * 1991-10-09 1994-08-09 Hatachi, Ltd. Noise reduced centrifugal blower

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474464A (en) * 1990-07-16 1992-03-09 Matsushita Electron Corp Semiconductor device
US5199846A (en) * 1990-10-22 1993-04-06 Hitachi, Ltd. Centrifugal fan with noise suppressing arrangement
US5336046A (en) * 1991-10-09 1994-08-09 Hatachi, Ltd. Noise reduced centrifugal blower

Similar Documents

Publication Publication Date Title
JPS5690555A (en) Semiconductor integrated circuit
JPS5623771A (en) Semiconductor memory
JPS6471163A (en) Semiconductor device for protecting electrical excessive stress
JPS56169369A (en) High withstand voltage mos field effect semiconductor device
JPS5638867A (en) Insulated gate type field effect transistor
JPS57153469A (en) Insulated gate type field effect transistor
JPS5724566A (en) Protective circuit for mos type gate
JPS56110264A (en) High withstand voltage mos transistor
JPS5762564A (en) Tunnel effect type protecting device
JPS57162360A (en) Complementary insulated gate field effect semiconductor device
JPS5541730A (en) Semiconductor device
JPS56133871A (en) Mos field effect semiconductor device with high breakdown voltage
JPS5489586A (en) Mos type semiconductor device
JPS55108771A (en) Semiconductor device
JPS5775073A (en) Solid image pickup device
JPS56104446A (en) Semiconductor device
JPS55103769A (en) Input protection device for semiconductor device
JPS5286086A (en) Field effect transistor
JPS54154281A (en) Bipolar semiconductor device and its manufacture
JPS5793579A (en) Compound semiconductor device
JPS56152269A (en) Field effect transistor
JPS548985A (en) Semiconductor device
JPS5756950A (en) Manufacture of insulated gate tupe semiconductor integrated ciucuit device
JPS556870A (en) Mos type semiconductor device
JPS57117275A (en) Semiconductor device