JPS5638867A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5638867A
JPS5638867A JP11418479A JP11418479A JPS5638867A JP S5638867 A JPS5638867 A JP S5638867A JP 11418479 A JP11418479 A JP 11418479A JP 11418479 A JP11418479 A JP 11418479A JP S5638867 A JPS5638867 A JP S5638867A
Authority
JP
Japan
Prior art keywords
region
type
concentration
drain
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11418479A
Other languages
Japanese (ja)
Other versions
JPS6243549B2 (en
Inventor
Takeaki Okabe
Shikayuki Ochi
Isao Yoshida
Minoru Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11418479A priority Critical patent/JPS5638867A/en
Publication of JPS5638867A publication Critical patent/JPS5638867A/en
Publication of JPS6243549B2 publication Critical patent/JPS6243549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Abstract

PURPOSE:To obtain an MISFET having the withstanding voltage of 400-600V or more, by forming an impurity concentration region, which is deeper than a resistor region, in the vicinity of the drain region in the resistor layer for alleviating the electric field concentration, extending to a gate electrode from a drain. CONSTITUTION:ON an N type semiconductor substrate 1, are formed a P type source region 2, a P type drain region 3, a P type low impurity-concentration region 5, a gate electrode 6, a source electrode 7, a drain electrode 8, and insulating films 9 and 9'. In the region 5, is provided a P type impurity region 4 for alleviating the concentration of the electric field at the tip A of the region 3. The distance L between the regions 3 and 4 is set so that the depletion layers extending from the regions 3 and 4 are overlapped each other.
JP11418479A 1979-09-07 1979-09-07 Insulated gate type field effect transistor Granted JPS5638867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11418479A JPS5638867A (en) 1979-09-07 1979-09-07 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11418479A JPS5638867A (en) 1979-09-07 1979-09-07 Insulated gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5638867A true JPS5638867A (en) 1981-04-14
JPS6243549B2 JPS6243549B2 (en) 1987-09-14

Family

ID=14631293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11418479A Granted JPS5638867A (en) 1979-09-07 1979-09-07 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5638867A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794436A (en) * 1986-11-10 1988-12-27 Siliconix Incorporated High voltage drifted-drain MOS transistor
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus
US5258636A (en) * 1991-12-12 1993-11-02 Power Integrations, Inc. Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes
EP0613187A3 (en) * 1993-02-15 1994-12-21 Fuji Electric Co Ltd High voltage MIS field effect transistor.
US6168983B1 (en) 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
US6207994B1 (en) 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6501130B2 (en) 2001-01-24 2002-12-31 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6509220B2 (en) 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6639277B2 (en) 1996-11-05 2003-10-28 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6781198B2 (en) 2001-09-07 2004-08-24 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6815293B2 (en) 2001-09-07 2004-11-09 Power Intergrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US7115958B2 (en) 2001-10-29 2006-10-03 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US9601613B2 (en) 2007-02-16 2017-03-21 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US9660053B2 (en) 2013-07-12 2017-05-23 Power Integrations, Inc. High-voltage field-effect transistor having multiple implanted layers
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0595443U (en) * 1992-05-29 1993-12-27 五光商事株式会社 Kitchen utensil storage device

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794436A (en) * 1986-11-10 1988-12-27 Siliconix Incorporated High voltage drifted-drain MOS transistor
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus
US5258636A (en) * 1991-12-12 1993-11-02 Power Integrations, Inc. Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes
EP0613187A3 (en) * 1993-02-15 1994-12-21 Fuji Electric Co Ltd High voltage MIS field effect transistor.
US5523599A (en) * 1993-02-15 1996-06-04 Fuji Electric Co., Ltd. High voltage MIS field effect transistor
US6570219B1 (en) 1996-11-05 2003-05-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6724041B2 (en) 1996-11-05 2004-04-20 Power Integrations, Inc. Method of making a high-voltage transistor with buried conduction regions
US6800903B2 (en) 1996-11-05 2004-10-05 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6777749B2 (en) 1996-11-05 2004-08-17 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6768172B2 (en) 1996-11-05 2004-07-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6787437B2 (en) 1996-11-05 2004-09-07 Power Integrations, Inc. Method of making a high-voltage transistor with buried conduction regions
US6633065B2 (en) 1996-11-05 2003-10-14 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6828631B2 (en) 1996-11-05 2004-12-07 Power Integrations, Inc High-voltage transistor with multi-layer conduction region
US6639277B2 (en) 1996-11-05 2003-10-28 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6168983B1 (en) 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
US6207994B1 (en) 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6509220B2 (en) 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6818490B2 (en) 2001-01-24 2004-11-16 Power Integrations, Inc. Method of fabricating complementary high-voltage field-effect transistors
US6504209B2 (en) 2001-01-24 2003-01-07 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6501130B2 (en) 2001-01-24 2002-12-31 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6750105B2 (en) 2001-09-07 2004-06-15 Power Integrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6787847B2 (en) 2001-09-07 2004-09-07 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6781198B2 (en) 2001-09-07 2004-08-24 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6815293B2 (en) 2001-09-07 2004-11-09 Power Intergrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US6667213B2 (en) 2001-09-07 2003-12-23 Power Integrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6838346B2 (en) 2001-09-07 2005-01-04 Power Integrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6882005B2 (en) 2001-09-07 2005-04-19 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6987299B2 (en) 2001-09-07 2006-01-17 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US7115958B2 (en) 2001-10-29 2006-10-03 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US9601613B2 (en) 2007-02-16 2017-03-21 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US9660053B2 (en) 2013-07-12 2017-05-23 Power Integrations, Inc. High-voltage field-effect transistor having multiple implanted layers
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates

Also Published As

Publication number Publication date
JPS6243549B2 (en) 1987-09-14

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