JPS571258A - Insulated gate semiconductor device - Google Patents
Insulated gate semiconductor deviceInfo
- Publication number
- JPS571258A JPS571258A JP7482380A JP7482380A JPS571258A JP S571258 A JPS571258 A JP S571258A JP 7482380 A JP7482380 A JP 7482380A JP 7482380 A JP7482380 A JP 7482380A JP S571258 A JPS571258 A JP S571258A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- drain
- concentration
- substrate
- neighborhood
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To contrive to enhance withstand voltage of the drain of an insulated gate semiconductor device without difficulty by a method wherein between the drain and a layer for prevention of reversion is separated, and a layer having lower concentration of impurity and being shallower than the drain is provided between them on the surface of the substrate. CONSTITUTION:An SiO2 layer 20 is formed sufficiently thick, the high concentration layer 8 being the same conductive type with the substrate 1 is formed in the lower layer, and moreover on the surface of the substrate 1 separating between the drain 5 and the layer 8, the layer 11 being the same conductive type with the substrate and having lower concentration than the substrate is formed as shallower than the drain 5. Accordingly withstand voltage of the drain is decided in accordance with the condition in the neighborhood of an interface between the same low concentration layer 10 and a gate oxide film 30 and the condition in the neighborhood of a contact face between the high concentration layer 8 and the low concentration layer 11. Because concentration and depth of the layers 10, 11 are as mentioned above, concentration of electric field in the neighborhood of the interface between the layer 10 and the oxide film 30 is mitigated, and on the contact face side of the layers 11, 8, by separating the drain 5 to the grade as depletion layer does not reach the layer 8 when the drain is reversely biased, concentration of electric field in the neighborhood of the contact face of the layers 11, 8 is also mitigated, and the MOS device having high withstand voltage can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7482380A JPS571258A (en) | 1980-06-02 | 1980-06-02 | Insulated gate semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7482380A JPS571258A (en) | 1980-06-02 | 1980-06-02 | Insulated gate semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS571258A true JPS571258A (en) | 1982-01-06 |
| JPS6331944B2 JPS6331944B2 (en) | 1988-06-27 |
Family
ID=13558411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7482380A Granted JPS571258A (en) | 1980-06-02 | 1980-06-02 | Insulated gate semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS571258A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5964032A (en) * | 1982-09-08 | 1984-04-11 | クレア−・バ−ナデツト・モデル | Method and apparatus for sampling membrane of uterus |
| JPS6064473A (en) * | 1983-09-20 | 1985-04-13 | Seiko Epson Corp | Mos type transistor |
| US4665418A (en) * | 1983-01-10 | 1987-05-12 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor memory device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63173655A (en) * | 1987-01-13 | 1988-07-18 | Canon Inc | Thermal recorder |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS564280A (en) * | 1979-06-25 | 1981-01-17 | Toshiba Corp | Insulated gate type field effect transistor |
-
1980
- 1980-06-02 JP JP7482380A patent/JPS571258A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS564280A (en) * | 1979-06-25 | 1981-01-17 | Toshiba Corp | Insulated gate type field effect transistor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5964032A (en) * | 1982-09-08 | 1984-04-11 | クレア−・バ−ナデツト・モデル | Method and apparatus for sampling membrane of uterus |
| JPH0340613B2 (en) * | 1982-09-08 | 1991-06-19 | ||
| US4665418A (en) * | 1983-01-10 | 1987-05-12 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor memory device |
| JPS6064473A (en) * | 1983-09-20 | 1985-04-13 | Seiko Epson Corp | Mos type transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6331944B2 (en) | 1988-06-27 |
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