JPS56152269A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS56152269A
JPS56152269A JP5597680A JP5597680A JPS56152269A JP S56152269 A JPS56152269 A JP S56152269A JP 5597680 A JP5597680 A JP 5597680A JP 5597680 A JP5597680 A JP 5597680A JP S56152269 A JPS56152269 A JP S56152269A
Authority
JP
Japan
Prior art keywords
semiconductor
region
layer
semiconductor region
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5597680A
Other languages
Japanese (ja)
Inventor
Katsuji Horiguchi
Akira Yoshii
Kiyoyuki Yokoyama
Tsunetaka Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5597680A priority Critical patent/JPS56152269A/en
Publication of JPS56152269A publication Critical patent/JPS56152269A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent misoperation occurring when a predetermined voltage is given by preventing a gate threshold voltage value from depending on a drain voltage. CONSTITUTION:An N type semiconductor layer 33 is formed to make a P-N junction 32 on a P type semiconductor substrate 31 and a P type semiconductor region 35 having the depth reaching the semiconductor substrate 31 from a main surface 34 side is formed in the semiconductor layer 33. An N<+> semiconductor region 36 having higher impurity density compared to the semiconductor layer 33 is formed as a drain region to consist the semiconductor layer 33 locating across the semiconductor regions 35 and 36 as a channel region 37. And an N<+> type semiconductor region 38 is formed as a source region in the semiconductor region 35 to consist the semiconductor region 35 locating across the semiconductor regions 37 and 38 as a channel region 39. Next, conductive layers 40, 41 are formed as a drain electrode and a source electrode to form a conductive layer 43 becoming as a gate electrode through a gate insulating layer 42. And a threshold voltage value is decided by the presence or absence of an inversion layer on the surface of the semiconductor region 39.
JP5597680A 1980-04-26 1980-04-26 Field effect transistor Pending JPS56152269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5597680A JPS56152269A (en) 1980-04-26 1980-04-26 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5597680A JPS56152269A (en) 1980-04-26 1980-04-26 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS56152269A true JPS56152269A (en) 1981-11-25

Family

ID=13014098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5597680A Pending JPS56152269A (en) 1980-04-26 1980-04-26 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS56152269A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01181458A (en) * 1988-01-11 1989-07-19 Toshiba Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5121751A (en) * 1974-08-19 1976-02-21 Automobile Antipollution ENZANKAIRO

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5121751A (en) * 1974-08-19 1976-02-21 Automobile Antipollution ENZANKAIRO

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01181458A (en) * 1988-01-11 1989-07-19 Toshiba Corp Semiconductor device

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