JPS5381087A - Gallium aresenide field effect transistor - Google Patents

Gallium aresenide field effect transistor

Info

Publication number
JPS5381087A
JPS5381087A JP15866276A JP15866276A JPS5381087A JP S5381087 A JPS5381087 A JP S5381087A JP 15866276 A JP15866276 A JP 15866276A JP 15866276 A JP15866276 A JP 15866276A JP S5381087 A JPS5381087 A JP S5381087A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
gallium aresenide
aresenide
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15866276A
Other languages
Japanese (ja)
Inventor
Hidetake Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15866276A priority Critical patent/JPS5381087A/en
Publication of JPS5381087A publication Critical patent/JPS5381087A/en
Pending legal-status Critical Current

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  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To shield an interface with the depletion layer from a buried and prevent the degradation in electrical characteristics by providing one of gate regions of dual gates on the same surface as source and drain regions and burying the other gate region near the interface between an operating layer and a substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP15866276A 1976-12-27 1976-12-27 Gallium aresenide field effect transistor Pending JPS5381087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15866276A JPS5381087A (en) 1976-12-27 1976-12-27 Gallium aresenide field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15866276A JPS5381087A (en) 1976-12-27 1976-12-27 Gallium aresenide field effect transistor

Publications (1)

Publication Number Publication Date
JPS5381087A true JPS5381087A (en) 1978-07-18

Family

ID=15676600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15866276A Pending JPS5381087A (en) 1976-12-27 1976-12-27 Gallium aresenide field effect transistor

Country Status (1)

Country Link
JP (1) JPS5381087A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135977A (en) * 1980-03-03 1981-10-23 Raytheon Co Field effect device and method of producing same
JPS58130560A (en) * 1982-01-29 1983-08-04 Hitachi Ltd Semiconductor memory integrated circuit
JPS58148466A (en) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp Semiconductor device
JPS59191385A (en) * 1983-04-15 1984-10-30 Oki Electric Ind Co Ltd Semiconductor device
US6242327B1 (en) 1997-09-19 2001-06-05 Fujitsu Limited Compound semiconductor device having a reduced source resistance

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135977A (en) * 1980-03-03 1981-10-23 Raytheon Co Field effect device and method of producing same
JPS58130560A (en) * 1982-01-29 1983-08-04 Hitachi Ltd Semiconductor memory integrated circuit
JPS58148466A (en) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp Semiconductor device
JPS59191385A (en) * 1983-04-15 1984-10-30 Oki Electric Ind Co Ltd Semiconductor device
US6242327B1 (en) 1997-09-19 2001-06-05 Fujitsu Limited Compound semiconductor device having a reduced source resistance

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