JPS56135977A - Field effect device and method of producing same - Google Patents
Field effect device and method of producing sameInfo
- Publication number
- JPS56135977A JPS56135977A JP3042581A JP3042581A JPS56135977A JP S56135977 A JPS56135977 A JP S56135977A JP 3042581 A JP3042581 A JP 3042581A JP 3042581 A JP3042581 A JP 3042581A JP S56135977 A JPS56135977 A JP S56135977A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect device
- producing same
- producing
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
- H01L29/6678—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates on sapphire substrates, e.g. SOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
- H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8086—Thin film JFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8126—Thin film MESFET's
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12678780A | 1980-03-03 | 1980-03-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56135977A true JPS56135977A (en) | 1981-10-23 |
Family
ID=22426654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3042581A Pending JPS56135977A (en) | 1980-03-03 | 1981-03-03 | Field effect device and method of producing same |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS56135977A (en) |
DE (1) | DE3107909A1 (en) |
GB (2) | GB2070858B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5873165A (en) * | 1981-10-27 | 1983-05-02 | Sumitomo Electric Ind Ltd | Schottky gate field effect transistor and manufacture thereof |
JPS5879771A (en) * | 1981-11-06 | 1983-05-13 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture thereof |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2527385B1 (en) * | 1982-04-13 | 1987-05-22 | Suwa Seikosha Kk | THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY PANEL USING THIS TYPE OF TRANSISTOR |
GB2133621B (en) * | 1983-01-11 | 1987-02-04 | Emi Ltd | Junction field effect transistor |
FR2663464B1 (en) * | 1990-06-19 | 1992-09-11 | Commissariat Energie Atomique | INTEGRATED CIRCUIT IN SILICON-ON-INSULATION TECHNOLOGY COMPRISING A FIELD-EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD. |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50135992A (en) * | 1974-03-29 | 1975-10-28 | ||
JPS5381087A (en) * | 1976-12-27 | 1978-07-18 | Fujitsu Ltd | Gallium aresenide field effect transistor |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1155578A (en) * | 1965-10-08 | 1969-06-18 | Sony Corp | Field Effect Transistor |
US4063271A (en) * | 1972-07-26 | 1977-12-13 | Texas Instruments Incorporated | FET and bipolar device and circuit process with maximum junction control |
NL184552C (en) * | 1978-07-24 | 1989-08-16 | Philips Nv | SEMICONDUCTOR FOR HIGH VOLTAGES. |
JPS55153377A (en) * | 1979-05-18 | 1980-11-29 | Matsushita Electronics Corp | Production of semiconductor device |
FR2460543A1 (en) * | 1979-06-29 | 1981-01-23 | Radiotechnique Compelec | FIELD-TYPE FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME |
JPS5658259A (en) * | 1979-10-18 | 1981-05-21 | Toshiba Corp | Semiconductor device and production thereof |
-
1981
- 1981-01-28 GB GB8102529A patent/GB2070858B/en not_active Expired
- 1981-03-02 DE DE19813107909 patent/DE3107909A1/en not_active Withdrawn
- 1981-03-03 JP JP3042581A patent/JPS56135977A/en active Pending
-
1983
- 1983-10-04 GB GB08326563A patent/GB2140616B/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50135992A (en) * | 1974-03-29 | 1975-10-28 | ||
JPS5381087A (en) * | 1976-12-27 | 1978-07-18 | Fujitsu Ltd | Gallium aresenide field effect transistor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5873165A (en) * | 1981-10-27 | 1983-05-02 | Sumitomo Electric Ind Ltd | Schottky gate field effect transistor and manufacture thereof |
JPH032339B2 (en) * | 1981-10-27 | 1991-01-14 | Sumitomo Electric Industries | |
JPS5879771A (en) * | 1981-11-06 | 1983-05-13 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
GB2070858B (en) | 1985-02-06 |
DE3107909A1 (en) | 1982-03-25 |
GB2140616A (en) | 1984-11-28 |
GB2070858A (en) | 1981-09-09 |
GB8326563D0 (en) | 1983-11-02 |
GB2140616B (en) | 1985-06-19 |
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