GB2133621B - Junction field effect transistor - Google Patents

Junction field effect transistor

Info

Publication number
GB2133621B
GB2133621B GB08334364A GB8334364A GB2133621B GB 2133621 B GB2133621 B GB 2133621B GB 08334364 A GB08334364 A GB 08334364A GB 8334364 A GB8334364 A GB 8334364A GB 2133621 B GB2133621 B GB 2133621B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
junction field
junction
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08334364A
Other versions
GB8334364D0 (en
GB2133621A (en
Inventor
Alan John Harrison
Tawfic Saeb Nashashibi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMI Ltd
Original Assignee
EMI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB838300617A external-priority patent/GB8300617D0/en
Application filed by EMI Ltd filed Critical EMI Ltd
Priority to GB08334364A priority Critical patent/GB2133621B/en
Publication of GB8334364D0 publication Critical patent/GB8334364D0/en
Publication of GB2133621A publication Critical patent/GB2133621A/en
Application granted granted Critical
Publication of GB2133621B publication Critical patent/GB2133621B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
GB08334364A 1983-01-11 1983-12-23 Junction field effect transistor Expired GB2133621B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08334364A GB2133621B (en) 1983-01-11 1983-12-23 Junction field effect transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB838300617A GB8300617D0 (en) 1983-01-11 1983-01-11 Junction field effect transistor
GB08334364A GB2133621B (en) 1983-01-11 1983-12-23 Junction field effect transistor

Publications (3)

Publication Number Publication Date
GB8334364D0 GB8334364D0 (en) 1984-02-01
GB2133621A GB2133621A (en) 1984-07-25
GB2133621B true GB2133621B (en) 1987-02-04

Family

ID=26284879

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08334364A Expired GB2133621B (en) 1983-01-11 1983-12-23 Junction field effect transistor

Country Status (1)

Country Link
GB (1) GB2133621B (en)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1279395A (en) * 1968-10-11 1972-06-28 Nat Res Dev Improvements relating to field effect transistors
FR2157740B1 (en) * 1971-10-29 1976-10-29 Thomson Csf
JPS524426B2 (en) * 1973-04-20 1977-02-03
FR2294544A1 (en) * 1974-12-13 1976-07-09 Thomson Csf MANUFACTURING PROCESS, IN AN INTEGRATED CIRCUIT, OF FIELD EFFECT TRANSISTORS INTENDED TO OPERATE AT VERY HIGH FREQUENCY, AND STRUCTURE OR DEVICES OBTAINED
GB1563913A (en) * 1975-12-12 1980-04-02 Hughes Aircraft Co Method of making schottky-barrier gallium arsenide field effect devices
NL184552C (en) * 1978-07-24 1989-08-16 Philips Nv SEMICONDUCTOR FOR HIGH VOLTAGES.
GB2070858B (en) * 1980-03-03 1985-02-06 Raytheon Co Shallow channel field effect transistor
GB2094058B (en) * 1981-03-03 1985-02-13 Standard Telephones Cables Ltd Fabricating integrated circuit field effect transistors

Also Published As

Publication number Publication date
GB8334364D0 (en) 1984-02-01
GB2133621A (en) 1984-07-25

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee