GB1279395A - Improvements relating to field effect transistors - Google Patents

Improvements relating to field effect transistors

Info

Publication number
GB1279395A
GB1279395A GB48211/68A GB4821168A GB1279395A GB 1279395 A GB1279395 A GB 1279395A GB 48211/68 A GB48211/68 A GB 48211/68A GB 4821168 A GB4821168 A GB 4821168A GB 1279395 A GB1279395 A GB 1279395A
Authority
GB
United Kingdom
Prior art keywords
channel
source
oct
drain
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB48211/68A
Inventor
William Godfrey Townsend
Anthony Norman Morgan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Priority to GB48211/68A priority Critical patent/GB1279395A/en
Publication of GB1279395A publication Critical patent/GB1279395A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

1279395 Semi-conductor devices NATIONAL RESEARCH DEVELOPMENT CORP 9 Oct 1969 [11 Oct 1968] 48211/68 Heading H1K A J.U.G.F.E.T. includes a channel C bounded by gate regions, of the opposite conductivity type, controlled by gate electrodes G which are substantially in the plane of the source electrode, a transverse cross-section of the channel near the source being elongated, and varying in width along its longer sides. The channel may comprise a plurality of linked dissimilarly shaped regions resulting in desired characteristics being achieved. In one embodiment the drain may be below the source (as shown), in another embodiment the source and drain may be in the same plane, and a heavily doped region may be present at the bight of the curved channel where it passes beneath the gate regions to reduce undesired resistance in the channel. The device may be of silicon.
GB48211/68A 1968-10-11 1968-10-11 Improvements relating to field effect transistors Expired GB1279395A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB48211/68A GB1279395A (en) 1968-10-11 1968-10-11 Improvements relating to field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB48211/68A GB1279395A (en) 1968-10-11 1968-10-11 Improvements relating to field effect transistors

Publications (1)

Publication Number Publication Date
GB1279395A true GB1279395A (en) 1972-06-28

Family

ID=10447778

Family Applications (1)

Application Number Title Priority Date Filing Date
GB48211/68A Expired GB1279395A (en) 1968-10-11 1968-10-11 Improvements relating to field effect transistors

Country Status (1)

Country Link
GB (1) GB1279395A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2539026A1 (en) * 1974-09-04 1976-03-25 Tokyo Shibaura Electric Co FIELD EFFECT TRANSISTOR
GB2133621A (en) * 1983-01-11 1984-07-25 Emi Ltd Junction field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2539026A1 (en) * 1974-09-04 1976-03-25 Tokyo Shibaura Electric Co FIELD EFFECT TRANSISTOR
GB2133621A (en) * 1983-01-11 1984-07-25 Emi Ltd Junction field effect transistor

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees