JPS5263686A - Non-voltatile semiconductor memory device - Google Patents

Non-voltatile semiconductor memory device

Info

Publication number
JPS5263686A
JPS5263686A JP13958875A JP13958875A JPS5263686A JP S5263686 A JPS5263686 A JP S5263686A JP 13958875 A JP13958875 A JP 13958875A JP 13958875 A JP13958875 A JP 13958875A JP S5263686 A JPS5263686 A JP S5263686A
Authority
JP
Japan
Prior art keywords
voltatile
memory device
semiconductor memory
increase
transistor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13958875A
Other languages
Japanese (ja)
Other versions
JPS5528552B2 (en
Inventor
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13958875A priority Critical patent/JPS5263686A/en
Publication of JPS5263686A publication Critical patent/JPS5263686A/en
Publication of JPS5528552B2 publication Critical patent/JPS5528552B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To increase the scale of integration and increase the speed of operation by partially providing a high impurity concentration layer of the same conductivity type as that of a substrate so as not to hamper channel current at the boundary of a memory transistor region and a gate transistor region and enabling writing with avalanche injection occuring therein.
JP13958875A 1975-11-20 1975-11-20 Non-voltatile semiconductor memory device Granted JPS5263686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13958875A JPS5263686A (en) 1975-11-20 1975-11-20 Non-voltatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13958875A JPS5263686A (en) 1975-11-20 1975-11-20 Non-voltatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5263686A true JPS5263686A (en) 1977-05-26
JPS5528552B2 JPS5528552B2 (en) 1980-07-29

Family

ID=15248751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13958875A Granted JPS5263686A (en) 1975-11-20 1975-11-20 Non-voltatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5263686A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US4764479A (en) * 1980-02-20 1988-08-16 Hitachi, Limited Semiconductor integrated circuit device and method of manufacturing the same
US5101250A (en) * 1988-06-28 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Electrically programmable non-volatile memory device and manufacturing method thereof
EP0551728A2 (en) * 1992-01-15 1993-07-21 National Semiconductor Corporation Electrically reprogrammable EPROM cell with merged transistor and optimum area

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6313082Y2 (en) * 1980-07-30 1988-04-14

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4764479A (en) * 1980-02-20 1988-08-16 Hitachi, Limited Semiconductor integrated circuit device and method of manufacturing the same
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US5101250A (en) * 1988-06-28 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Electrically programmable non-volatile memory device and manufacturing method thereof
EP0551728A2 (en) * 1992-01-15 1993-07-21 National Semiconductor Corporation Electrically reprogrammable EPROM cell with merged transistor and optimum area
EP0551728A3 (en) * 1992-01-15 1994-01-19 Nat Semiconductor Corp

Also Published As

Publication number Publication date
JPS5528552B2 (en) 1980-07-29

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