JPS5530862A - Method of making semiconductor device - Google Patents

Method of making semiconductor device

Info

Publication number
JPS5530862A
JPS5530862A JP10421878A JP10421878A JPS5530862A JP S5530862 A JPS5530862 A JP S5530862A JP 10421878 A JP10421878 A JP 10421878A JP 10421878 A JP10421878 A JP 10421878A JP S5530862 A JPS5530862 A JP S5530862A
Authority
JP
Japan
Prior art keywords
transistor
threshold voltage
ion injection
type
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10421878A
Other languages
Japanese (ja)
Inventor
Yoshio Fujishiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP10421878A priority Critical patent/JPS5530862A/en
Publication of JPS5530862A publication Critical patent/JPS5530862A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To provide a freer design of circuit employing the ion injection techniques so that at least one of field-effect transistors of the same conductivity type has a different threshold voltage.
CONSTITUTION: Transistor X having a threshold voltage VTP is obtained by injecting, for example, boron atoms into a gate 6a of a p-type transistor having a concentration of from 1 to 5×1011cm-2 in accordance with the ion injection techniques. Further, simultaneously with the injection of ions into the p-type transistor, a similar ion injection is carried out to a gate of an n-type transistor, to obtain transistor Z having a threshold voltage VTN2, different from transistor Y of the n-type having a threshold voltage VTN1 to which no ion injection has been carried out.
COPYRIGHT: (C)1980,JPO&Japio
JP10421878A 1978-08-25 1978-08-25 Method of making semiconductor device Pending JPS5530862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10421878A JPS5530862A (en) 1978-08-25 1978-08-25 Method of making semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10421878A JPS5530862A (en) 1978-08-25 1978-08-25 Method of making semiconductor device

Publications (1)

Publication Number Publication Date
JPS5530862A true JPS5530862A (en) 1980-03-04

Family

ID=14374811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10421878A Pending JPS5530862A (en) 1978-08-25 1978-08-25 Method of making semiconductor device

Country Status (1)

Country Link
JP (1) JPS5530862A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998035386A1 (en) * 1997-02-05 1998-08-13 Telefonaktiebolaget Lm Ericsson Radio architecture
JP2001516955A (en) * 1997-09-11 2001-10-02 テレフオンアクチーボラゲツト エル エム エリクソン Electric device and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998035386A1 (en) * 1997-02-05 1998-08-13 Telefonaktiebolaget Lm Ericsson Radio architecture
US6611680B2 (en) 1997-02-05 2003-08-26 Telefonaktiebolaget Lm Ericsson (Publ) Radio architecture
US6973290B2 (en) 1997-02-05 2005-12-06 Telefonaktiebolaget L M Ericsson (Publ) Radio architecture
JP2001516955A (en) * 1997-09-11 2001-10-02 テレフオンアクチーボラゲツト エル エム エリクソン Electric device and manufacturing method thereof

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