JPS5530862A - Method of making semiconductor device - Google Patents
Method of making semiconductor deviceInfo
- Publication number
- JPS5530862A JPS5530862A JP10421878A JP10421878A JPS5530862A JP S5530862 A JPS5530862 A JP S5530862A JP 10421878 A JP10421878 A JP 10421878A JP 10421878 A JP10421878 A JP 10421878A JP S5530862 A JPS5530862 A JP S5530862A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- threshold voltage
- ion injection
- type
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To provide a freer design of circuit employing the ion injection techniques so that at least one of field-effect transistors of the same conductivity type has a different threshold voltage.
CONSTITUTION: Transistor X having a threshold voltage VTP is obtained by injecting, for example, boron atoms into a gate 6a of a p-type transistor having a concentration of from 1 to 5×1011cm-2 in accordance with the ion injection techniques. Further, simultaneously with the injection of ions into the p-type transistor, a similar ion injection is carried out to a gate of an n-type transistor, to obtain transistor Z having a threshold voltage VTN2, different from transistor Y of the n-type having a threshold voltage VTN1 to which no ion injection has been carried out.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10421878A JPS5530862A (en) | 1978-08-25 | 1978-08-25 | Method of making semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10421878A JPS5530862A (en) | 1978-08-25 | 1978-08-25 | Method of making semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5530862A true JPS5530862A (en) | 1980-03-04 |
Family
ID=14374811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10421878A Pending JPS5530862A (en) | 1978-08-25 | 1978-08-25 | Method of making semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5530862A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998035386A1 (en) * | 1997-02-05 | 1998-08-13 | Telefonaktiebolaget Lm Ericsson | Radio architecture |
JP2001516955A (en) * | 1997-09-11 | 2001-10-02 | テレフオンアクチーボラゲツト エル エム エリクソン | Electric device and manufacturing method thereof |
-
1978
- 1978-08-25 JP JP10421878A patent/JPS5530862A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998035386A1 (en) * | 1997-02-05 | 1998-08-13 | Telefonaktiebolaget Lm Ericsson | Radio architecture |
US6611680B2 (en) | 1997-02-05 | 2003-08-26 | Telefonaktiebolaget Lm Ericsson (Publ) | Radio architecture |
US6973290B2 (en) | 1997-02-05 | 2005-12-06 | Telefonaktiebolaget L M Ericsson (Publ) | Radio architecture |
JP2001516955A (en) * | 1997-09-11 | 2001-10-02 | テレフオンアクチーボラゲツト エル エム エリクソン | Electric device and manufacturing method thereof |
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