JPS5629718A - Reference voltage circuit device - Google Patents

Reference voltage circuit device

Info

Publication number
JPS5629718A
JPS5629718A JP10423479A JP10423479A JPS5629718A JP S5629718 A JPS5629718 A JP S5629718A JP 10423479 A JP10423479 A JP 10423479A JP 10423479 A JP10423479 A JP 10423479A JP S5629718 A JPS5629718 A JP S5629718A
Authority
JP
Japan
Prior art keywords
gate
source
drain
vtd
vte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10423479A
Other languages
Japanese (ja)
Inventor
Kunihiko Yoshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10423479A priority Critical patent/JPS5629718A/en
Publication of JPS5629718A publication Critical patent/JPS5629718A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To realize a small of power consumption as well as the simplification of the constitution, by connecting the enhancement-type MOS transistor with the short circuit given between its drain and gate between the source and the gate of the depletion-type MOS transistor.
CONSTITUTION: The gate of the depletion-type MOS transistor QD32 is earthed, and the enhancement-type transistor QE31 with the short circuit given between its drain and gate is connected between the source and the gate of the transistor QD32. At the same time, the drain of the QD32 is connected to the plus power source V+ via the load 33, and the output 34 of the reference voltage VD is extracted out of the source of the QD. In such constitution, both the QD32 and QE31 can work in the saturated region by selecting the drain voltage of the QD32 to a proper level. Accordingly, the relation between the voltage and the current between the gate and the source has the known square characteristics. And the intersection 43 of the two curves turns into the output voltage VD, and the position of the VD is between VTE and -VTD (VTE and VTD: threshold levels of QE31 and QD32 each). And the value of the VD is reduced to a half of VTE-VTD, and furthermore no term of the current is included at all.
COPYRIGHT: (C)1981,JPO&Japio
JP10423479A 1979-08-15 1979-08-15 Reference voltage circuit device Pending JPS5629718A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10423479A JPS5629718A (en) 1979-08-15 1979-08-15 Reference voltage circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10423479A JPS5629718A (en) 1979-08-15 1979-08-15 Reference voltage circuit device

Publications (1)

Publication Number Publication Date
JPS5629718A true JPS5629718A (en) 1981-03-25

Family

ID=14375262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10423479A Pending JPS5629718A (en) 1979-08-15 1979-08-15 Reference voltage circuit device

Country Status (1)

Country Link
JP (1) JPS5629718A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60181806A (en) * 1984-02-28 1985-09-17 Sharp Corp Reference voltage circuit
JPH08335122A (en) * 1995-04-05 1996-12-17 Seiko Instr Inc Semiconductor device for reference voltage
JP2010170533A (en) * 2008-12-22 2010-08-05 Seiko Instruments Inc Reference voltage circuit and semiconductor device
JP2013161258A (en) * 2012-02-03 2013-08-19 Torex Semiconductor Ltd Power supply circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5150446A (en) * 1974-10-30 1976-05-04 Hitachi Ltd TEIDENATSU KAIRO
JPS52112754A (en) * 1976-03-18 1977-09-21 Sharp Corp Mos transistor constant-voltage circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5150446A (en) * 1974-10-30 1976-05-04 Hitachi Ltd TEIDENATSU KAIRO
JPS52112754A (en) * 1976-03-18 1977-09-21 Sharp Corp Mos transistor constant-voltage circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60181806A (en) * 1984-02-28 1985-09-17 Sharp Corp Reference voltage circuit
JPH08335122A (en) * 1995-04-05 1996-12-17 Seiko Instr Inc Semiconductor device for reference voltage
JP2010170533A (en) * 2008-12-22 2010-08-05 Seiko Instruments Inc Reference voltage circuit and semiconductor device
JP2013161258A (en) * 2012-02-03 2013-08-19 Torex Semiconductor Ltd Power supply circuit

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