JPS53142883A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS53142883A JPS53142883A JP5829477A JP5829477A JPS53142883A JP S53142883 A JPS53142883 A JP S53142883A JP 5829477 A JP5829477 A JP 5829477A JP 5829477 A JP5829477 A JP 5829477A JP S53142883 A JPS53142883 A JP S53142883A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- type fet
- junction type
- unifiedly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To manufacture a n-channel junction type FET and a bipolar type transistor unifiedly with less dispersion in the threshold voltage and drain current for junction type FET with a comparatively simple manufacturing process.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5829477A JPS53142883A (en) | 1977-05-19 | 1977-05-19 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5829477A JPS53142883A (en) | 1977-05-19 | 1977-05-19 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53142883A true JPS53142883A (en) | 1978-12-12 |
Family
ID=13080188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5829477A Pending JPS53142883A (en) | 1977-05-19 | 1977-05-19 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53142883A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5740983A (en) * | 1980-08-26 | 1982-03-06 | Nec Corp | Semiconductor device and manufacture thereof |
-
1977
- 1977-05-19 JP JP5829477A patent/JPS53142883A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5740983A (en) * | 1980-08-26 | 1982-03-06 | Nec Corp | Semiconductor device and manufacture thereof |
JPS6257111B2 (en) * | 1980-08-26 | 1987-11-30 | Nippon Electric Co |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5435689A (en) | Semiconductor integrated circuit device | |
JPS5422781A (en) | Insulator gate protective semiconductor device | |
JPS53135249A (en) | Logic circuit system for integration | |
JPS5238889A (en) | Vertical junction type field effect transistor | |
JPS5244574A (en) | Semiconductor device | |
JPS5384570A (en) | Field effect semiconductor device and its manufacture | |
JPS53142883A (en) | Manufacture for semiconductor device | |
JPS53149771A (en) | Mis-type semiconductor device and its manufacture | |
JPS5216182A (en) | Junction type field effect transistor | |
JPS5424582A (en) | Manufacture for mis semiconductor device | |
JPS52117582A (en) | Mos type semiconductor device | |
JPS52128080A (en) | Junction-type field effect transistor | |
JPS5378782A (en) | Transmission characteristic variable mos semiconductor device | |
JPS5297683A (en) | Semiconductor circuit device | |
JPS52123179A (en) | Mos type semiconductor device and its production | |
JPS5366382A (en) | Mos type field effect transistor | |
JPS5227279A (en) | Semiconductor unit | |
JPS5211881A (en) | Semiconductor integrated circuit device | |
JPS5296871A (en) | Manufacture of mos type transistor | |
JPS5371573A (en) | Field effect transistor of isolating gate type | |
JPS5265679A (en) | Semiconductor device | |
JPS5248981A (en) | Junction type field effect transistor | |
JPS533071A (en) | Semiconductor device | |
JPS5396770A (en) | Production of mis transistor | |
JPS539480A (en) | Semiconductor device |