JPS53142883A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53142883A
JPS53142883A JP5829477A JP5829477A JPS53142883A JP S53142883 A JPS53142883 A JP S53142883A JP 5829477 A JP5829477 A JP 5829477A JP 5829477 A JP5829477 A JP 5829477A JP S53142883 A JPS53142883 A JP S53142883A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
type fet
junction type
unifiedly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5829477A
Other languages
Japanese (ja)
Inventor
Haruyasu Yamada
Toyoki Takemoto
Tsutomu Fujita
Hideaki Sadamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5829477A priority Critical patent/JPS53142883A/en
Publication of JPS53142883A publication Critical patent/JPS53142883A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To manufacture a n-channel junction type FET and a bipolar type transistor unifiedly with less dispersion in the threshold voltage and drain current for junction type FET with a comparatively simple manufacturing process.
COPYRIGHT: (C)1978,JPO&Japio
JP5829477A 1977-05-19 1977-05-19 Manufacture for semiconductor device Pending JPS53142883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5829477A JPS53142883A (en) 1977-05-19 1977-05-19 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5829477A JPS53142883A (en) 1977-05-19 1977-05-19 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS53142883A true JPS53142883A (en) 1978-12-12

Family

ID=13080188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5829477A Pending JPS53142883A (en) 1977-05-19 1977-05-19 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS53142883A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740983A (en) * 1980-08-26 1982-03-06 Nec Corp Semiconductor device and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740983A (en) * 1980-08-26 1982-03-06 Nec Corp Semiconductor device and manufacture thereof
JPS6257111B2 (en) * 1980-08-26 1987-11-30 Nippon Electric Co

Similar Documents

Publication Publication Date Title
JPS5435689A (en) Semiconductor integrated circuit device
JPS5422781A (en) Insulator gate protective semiconductor device
JPS53135249A (en) Logic circuit system for integration
JPS5238889A (en) Vertical junction type field effect transistor
JPS5244574A (en) Semiconductor device
JPS5384570A (en) Field effect semiconductor device and its manufacture
JPS53142883A (en) Manufacture for semiconductor device
JPS53149771A (en) Mis-type semiconductor device and its manufacture
JPS5216182A (en) Junction type field effect transistor
JPS5424582A (en) Manufacture for mis semiconductor device
JPS52117582A (en) Mos type semiconductor device
JPS52128080A (en) Junction-type field effect transistor
JPS5378782A (en) Transmission characteristic variable mos semiconductor device
JPS5297683A (en) Semiconductor circuit device
JPS52123179A (en) Mos type semiconductor device and its production
JPS5366382A (en) Mos type field effect transistor
JPS5227279A (en) Semiconductor unit
JPS5211881A (en) Semiconductor integrated circuit device
JPS5296871A (en) Manufacture of mos type transistor
JPS5371573A (en) Field effect transistor of isolating gate type
JPS5265679A (en) Semiconductor device
JPS5248981A (en) Junction type field effect transistor
JPS533071A (en) Semiconductor device
JPS5396770A (en) Production of mis transistor
JPS539480A (en) Semiconductor device