JPS5238889A - Vertical junction type field effect transistor - Google Patents

Vertical junction type field effect transistor

Info

Publication number
JPS5238889A
JPS5238889A JP50114598A JP11459875A JPS5238889A JP S5238889 A JPS5238889 A JP S5238889A JP 50114598 A JP50114598 A JP 50114598A JP 11459875 A JP11459875 A JP 11459875A JP S5238889 A JPS5238889 A JP S5238889A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
junction type
vertical junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50114598A
Inventor
Goro Mitarai
Hiroshi Saikai
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50114598A priority Critical patent/JPS5238889A/en
Publication of JPS5238889A publication Critical patent/JPS5238889A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To allow a vertical FET to be operated also by forward bias voltage within a diffusion potential difference thereby increasing drain current at a small area and decreasing junction capacitance.
COPYRIGHT: (C)1977,JPO&Japio
JP50114598A 1975-09-22 1975-09-22 Vertical junction type field effect transistor Pending JPS5238889A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50114598A JPS5238889A (en) 1975-09-22 1975-09-22 Vertical junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50114598A JPS5238889A (en) 1975-09-22 1975-09-22 Vertical junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5238889A true JPS5238889A (en) 1977-03-25

Family

ID=14641858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50114598A Pending JPS5238889A (en) 1975-09-22 1975-09-22 Vertical junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5238889A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598872A (en) * 1979-01-22 1980-07-28 Semiconductor Res Found Semiconductor device
US5608244A (en) * 1992-04-28 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
US6635906B1 (en) * 1993-10-29 2003-10-21 Third Dimension (3D) Semiconductor Voltage sustaining layer with opposite-doped islands for semi-conductor power devices
US7944018B2 (en) 2006-08-14 2011-05-17 Icemos Technology Ltd. Semiconductor devices with sealed, unlined trenches and methods of forming same
US8946814B2 (en) 2012-04-05 2015-02-03 Icemos Technology Ltd. Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates
US9543380B2 (en) 2007-09-28 2017-01-10 Michael W. Shore Multi-directional trenching of a die in manufacturing superjunction devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5082977A (en) * 1973-11-20 1975-07-04
JPS5185679A (en) * 1975-01-27 1976-07-27 Nippon Musical Instruments Mfg

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5082977A (en) * 1973-11-20 1975-07-04
JPS5185679A (en) * 1975-01-27 1976-07-27 Nippon Musical Instruments Mfg

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6352475B2 (en) * 1979-01-22 1988-10-19 Handotai Kenkyu Shinkokai
JPS5598872A (en) * 1979-01-22 1980-07-28 Semiconductor Res Found Semiconductor device
US5608244A (en) * 1992-04-28 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
US8071450B2 (en) 1993-10-29 2011-12-06 Third Dimension (3D) Semiconductor, Inc. Method for forming voltage sustaining layer with opposite-doped islands for semiconductor power devices
US6635906B1 (en) * 1993-10-29 2003-10-21 Third Dimension (3D) Semiconductor Voltage sustaining layer with opposite-doped islands for semi-conductor power devices
US7227197B2 (en) 1993-10-29 2007-06-05 Third Dimension (3D) Semiconductor, Inc. Semiconductor high-voltage devices
US7271067B2 (en) 1993-10-29 2007-09-18 Third Dimension (3D) Semiconductor, Inc. Voltage sustaining layer with opposite-doped islands for semiconductor power devices
US7498614B2 (en) 1993-10-29 2009-03-03 Third Dimension (3D) Semiconductor, Inc. Voltage sustaining layer with opposite-doped islands for semiconductor power devices
US7944018B2 (en) 2006-08-14 2011-05-17 Icemos Technology Ltd. Semiconductor devices with sealed, unlined trenches and methods of forming same
US8129252B2 (en) 2006-08-14 2012-03-06 Icemos Technology Ltd. Semiconductor devices with sealed, unlined trenches and methods of forming same
US8716829B2 (en) 2006-08-14 2014-05-06 Icemos Technology Ltd. Semiconductor devices with sealed, unlined trenches and methods of forming same
US8736019B2 (en) 2006-08-14 2014-05-27 Icemos Technology Ltd. Semiconductor devices with sealed, unlined trenches and methods of forming same
US9543380B2 (en) 2007-09-28 2017-01-10 Michael W. Shore Multi-directional trenching of a die in manufacturing superjunction devices
US8946814B2 (en) 2012-04-05 2015-02-03 Icemos Technology Ltd. Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates

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