JPS5489581A - Composite transistor circuit - Google Patents

Composite transistor circuit

Info

Publication number
JPS5489581A
JPS5489581A JP15970677A JP15970677A JPS5489581A JP S5489581 A JPS5489581 A JP S5489581A JP 15970677 A JP15970677 A JP 15970677A JP 15970677 A JP15970677 A JP 15970677A JP S5489581 A JPS5489581 A JP S5489581A
Authority
JP
Japan
Prior art keywords
base
fet2
current
fet
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15970677A
Other languages
Japanese (ja)
Inventor
Akiyasu Ishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP15970677A priority Critical patent/JPS5489581A/en
Publication of JPS5489581A publication Critical patent/JPS5489581A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To enable to handle greater current more than the saturated current of FET, by linking the gate bias of the junction type FET to the base potential of the bipolar transistor.
CONSTITUTION: The collector of the bipolar transistor Q1 and the source of the junction type FET 2 are connected and the base of Ql and the gate of FET2 are connected, and liads E, B, and C are led out from the emitter and base of Q1 and the drain of FET2. Accordingly, when Q1 enters the saturation region, the gate voltage of FET2 is decreased and the gate voltage is biased forward by the base-to- emitter voltage of Q1 and the current more than the saturated current of FET 2 can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP15970677A 1977-12-27 1977-12-27 Composite transistor circuit Pending JPS5489581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15970677A JPS5489581A (en) 1977-12-27 1977-12-27 Composite transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15970677A JPS5489581A (en) 1977-12-27 1977-12-27 Composite transistor circuit

Publications (1)

Publication Number Publication Date
JPS5489581A true JPS5489581A (en) 1979-07-16

Family

ID=15699515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15970677A Pending JPS5489581A (en) 1977-12-27 1977-12-27 Composite transistor circuit

Country Status (1)

Country Link
JP (1) JPS5489581A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753975A (en) * 1980-08-04 1982-03-31 Siemens Ag
JPS57186361A (en) * 1981-05-12 1982-11-16 Fuji Electric Co Ltd Transistor having high-dielectric strength
JPS607176A (en) * 1983-06-27 1985-01-14 Nippon Texas Instr Kk Semiconductor device
JP2015526900A (en) * 2012-07-16 2015-09-10 トランスフォーム インコーポレーテッド Semiconductor electronic components with built-in current limiters
JP2017092474A (en) * 2015-11-10 2017-05-25 アナログ デバイシス グローバル Combination of fet-bipolar transistor
JP2017092472A (en) * 2015-11-10 2017-05-25 アナログ デバイシス グローバル Combination of fet-bipolar transistor and switch with such combination of fie-bipolar transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753975A (en) * 1980-08-04 1982-03-31 Siemens Ag
JPS57186361A (en) * 1981-05-12 1982-11-16 Fuji Electric Co Ltd Transistor having high-dielectric strength
JPS607176A (en) * 1983-06-27 1985-01-14 Nippon Texas Instr Kk Semiconductor device
JP2015526900A (en) * 2012-07-16 2015-09-10 トランスフォーム インコーポレーテッド Semiconductor electronic components with built-in current limiters
JP2017092474A (en) * 2015-11-10 2017-05-25 アナログ デバイシス グローバル Combination of fet-bipolar transistor
JP2017092472A (en) * 2015-11-10 2017-05-25 アナログ デバイシス グローバル Combination of fet-bipolar transistor and switch with such combination of fie-bipolar transistor

Similar Documents

Publication Publication Date Title
JPS5435689A (en) Semiconductor integrated circuit device
JPS5247383A (en) Semiconductor device
JPS5489581A (en) Composite transistor circuit
JPS5238889A (en) Vertical junction type field effect transistor
JPS53135249A (en) Logic circuit system for integration
JPS5643808A (en) Signal converting circuit
JPS5428552A (en) Muting circuit
JPS5230389A (en) Thyristor
JPS53121151A (en) Constant current circuit
JPS5216182A (en) Junction type field effect transistor
JPS5368174A (en) Lateral transistor
JPS5439562A (en) Semiconductor switch
JPS5487059A (en) Semiconductor circuit and semiconductor device
JPS5366384A (en) Thyristor
JPS5432274A (en) Junction type field effect transistor
JPS52133761A (en) Integrated circuit
JPS547556A (en) Minute current source circuit
JPS53118984A (en) Semiconductor switch
JPS5428551A (en) Muting circuit
JPS53125749A (en) Fm detection circuit
JPS53106419A (en) Dc booster
JPS53142883A (en) Manufacture for semiconductor device
JPS53133358A (en) Switch circuit
JPS52117543A (en) Transistor circuit
JPS551778A (en) Tuning indicator