JPS5378177A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS5378177A JPS5378177A JP15335476A JP15335476A JPS5378177A JP S5378177 A JPS5378177 A JP S5378177A JP 15335476 A JP15335476 A JP 15335476A JP 15335476 A JP15335476 A JP 15335476A JP S5378177 A JPS5378177 A JP S5378177A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- gate
- anisotropy
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain FET with the high source-gate strength though the gate gap is small by anisotropy-etching a GaAs substrate.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15335476A JPS5378177A (en) | 1976-12-22 | 1976-12-22 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15335476A JPS5378177A (en) | 1976-12-22 | 1976-12-22 | Field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5378177A true JPS5378177A (en) | 1978-07-11 |
JPS5742231B2 JPS5742231B2 (en) | 1982-09-07 |
Family
ID=15560618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15335476A Granted JPS5378177A (en) | 1976-12-22 | 1976-12-22 | Field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5378177A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5654075A (en) * | 1979-07-27 | 1981-05-13 | Gen Electric | High frequency field effect transistor and method of manufacturing same |
US4447904A (en) * | 1981-02-04 | 1984-05-08 | Xerox Corporation | Semiconductor devices with nonplanar characteristics produced in chemical vapor deposition |
WO2001048809A1 (en) * | 1999-12-24 | 2001-07-05 | Sumitomo Electric Industries, Ltd. | Junction field-effect transistor and method of manufacture thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5027992A (en) * | 1973-07-17 | 1975-03-22 |
-
1976
- 1976-12-22 JP JP15335476A patent/JPS5378177A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5027992A (en) * | 1973-07-17 | 1975-03-22 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5654075A (en) * | 1979-07-27 | 1981-05-13 | Gen Electric | High frequency field effect transistor and method of manufacturing same |
US4447904A (en) * | 1981-02-04 | 1984-05-08 | Xerox Corporation | Semiconductor devices with nonplanar characteristics produced in chemical vapor deposition |
WO2001048809A1 (en) * | 1999-12-24 | 2001-07-05 | Sumitomo Electric Industries, Ltd. | Junction field-effect transistor and method of manufacture thereof |
US6870189B1 (en) | 1999-12-24 | 2005-03-22 | Sumitomo Electric Industries, Ltd. | Pinch-off type vertical junction field effect transistor and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JPS5742231B2 (en) | 1982-09-07 |
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