JPS53147469A - Vertical field effect transistor and production of the same - Google Patents

Vertical field effect transistor and production of the same

Info

Publication number
JPS53147469A
JPS53147469A JP6179177A JP6179177A JPS53147469A JP S53147469 A JPS53147469 A JP S53147469A JP 6179177 A JP6179177 A JP 6179177A JP 6179177 A JP6179177 A JP 6179177A JP S53147469 A JPS53147469 A JP S53147469A
Authority
JP
Japan
Prior art keywords
production
same
field effect
effect transistor
vertical field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6179177A
Other languages
Japanese (ja)
Other versions
JPS5751272B2 (en
Inventor
Yoshiharu Kobayashi
Tetsushi Sakai
Hiroki Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6179177A priority Critical patent/JPS53147469A/en
Publication of JPS53147469A publication Critical patent/JPS53147469A/en
Publication of JPS5751272B2 publication Critical patent/JPS5751272B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To porduce FET of small gate input capacity by opening holes in the insulating film on the the sloped surfaces of the B-grooves formed in a substrate, and diffusion-forming gate regions.
COPYRIGHT: (C)1978,JPO&Japio
JP6179177A 1977-05-27 1977-05-27 Vertical field effect transistor and production of the same Granted JPS53147469A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6179177A JPS53147469A (en) 1977-05-27 1977-05-27 Vertical field effect transistor and production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6179177A JPS53147469A (en) 1977-05-27 1977-05-27 Vertical field effect transistor and production of the same

Publications (2)

Publication Number Publication Date
JPS53147469A true JPS53147469A (en) 1978-12-22
JPS5751272B2 JPS5751272B2 (en) 1982-11-01

Family

ID=13181265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6179177A Granted JPS53147469A (en) 1977-05-27 1977-05-27 Vertical field effect transistor and production of the same

Country Status (1)

Country Link
JP (1) JPS53147469A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650558A (en) * 1979-10-01 1981-05-07 Seiko Epson Corp Complementary mos integrated circuit
US4520552A (en) * 1980-04-14 1985-06-04 Thomson-Csf Semiconductor device with deep grip accessible via the surface and process for manufacturing same
JPH0251279A (en) * 1988-08-15 1990-02-21 Nec Corp Vertical field effect transistor
JPH02189979A (en) * 1989-01-18 1990-07-25 Mitsubishi Electric Corp Static induction type switching element and manufacture thereof
JPH06350104A (en) * 1993-06-03 1994-12-22 Tokin Corp Electrostatic induction type semiconductor device
US11094816B2 (en) 2019-08-20 2021-08-17 Kabushiki Kaisha Toshiba Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132187A (en) * 1974-09-11 1976-03-18 Matsushita Electric Ind Co Ltd Denkaikokatoranjisuta
JPS5245281A (en) * 1975-10-07 1977-04-09 Matsushita Electric Ind Co Ltd Field effect transistor of vertical junction type

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132187A (en) * 1974-09-11 1976-03-18 Matsushita Electric Ind Co Ltd Denkaikokatoranjisuta
JPS5245281A (en) * 1975-10-07 1977-04-09 Matsushita Electric Ind Co Ltd Field effect transistor of vertical junction type

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650558A (en) * 1979-10-01 1981-05-07 Seiko Epson Corp Complementary mos integrated circuit
JPS6253952B2 (en) * 1979-10-01 1987-11-12 Seiko Epson Corp
US4520552A (en) * 1980-04-14 1985-06-04 Thomson-Csf Semiconductor device with deep grip accessible via the surface and process for manufacturing same
JPH0251279A (en) * 1988-08-15 1990-02-21 Nec Corp Vertical field effect transistor
JPH02189979A (en) * 1989-01-18 1990-07-25 Mitsubishi Electric Corp Static induction type switching element and manufacture thereof
JPH06350104A (en) * 1993-06-03 1994-12-22 Tokin Corp Electrostatic induction type semiconductor device
US11094816B2 (en) 2019-08-20 2021-08-17 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
JPS5751272B2 (en) 1982-11-01

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