JPS5650558A - Complementary mos integrated circuit - Google Patents

Complementary mos integrated circuit

Info

Publication number
JPS5650558A
JPS5650558A JP12652179A JP12652179A JPS5650558A JP S5650558 A JPS5650558 A JP S5650558A JP 12652179 A JP12652179 A JP 12652179A JP 12652179 A JP12652179 A JP 12652179A JP S5650558 A JPS5650558 A JP S5650558A
Authority
JP
Japan
Prior art keywords
substrate
reduced
type
cmos
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12652179A
Other languages
Japanese (ja)
Other versions
JPS6253952B2 (en
Inventor
Shinji Morozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP12652179A priority Critical patent/JPS5650558A/en
Publication of JPS5650558A publication Critical patent/JPS5650558A/en
Publication of JPS6253952B2 publication Critical patent/JPS6253952B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the integrity of a CMOS-IC by forming a V-shaped groove on the junction surface between a substrate and a well and applying said technique to the isolation between elements. CONSTITUTION:A substrate is cut with a V shape in the vicinity of the junction surface between an N<-> type substrate 1 and a P<-> type well 10 becoming a P channel substrate, thereby removing the portion where a depletion layer may become broadended easily due to low density caused by the lateral expansion of diffusion, and the depletion layer is erased horizontally with each other. Accordingly, contact of the depletion hardly occur with a result that the minimum interval W becomes reduced between the P<+> type layer 11 and N channel side N<+> type layer 14 of P channel side. When the static memory cell of CMOS is applied with this, the distance between the P<-> and N<-> can be reduced from 16 to 6mum, and the isolating distance between the transistors can be reduced from 5 to 3mum.
JP12652179A 1979-10-01 1979-10-01 Complementary mos integrated circuit Granted JPS5650558A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12652179A JPS5650558A (en) 1979-10-01 1979-10-01 Complementary mos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12652179A JPS5650558A (en) 1979-10-01 1979-10-01 Complementary mos integrated circuit

Publications (2)

Publication Number Publication Date
JPS5650558A true JPS5650558A (en) 1981-05-07
JPS6253952B2 JPS6253952B2 (en) 1987-11-12

Family

ID=14937257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12652179A Granted JPS5650558A (en) 1979-10-01 1979-10-01 Complementary mos integrated circuit

Country Status (1)

Country Link
JP (1) JPS5650558A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61501736A (en) * 1984-03-29 1986-08-14 ヒユ−ズ・エアクラフト・カンパニ− Latch-up resistant CMOS structure for VLSI
US6780713B2 (en) 2001-06-29 2004-08-24 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6806131B2 (en) 2001-06-29 2004-10-19 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6878603B2 (en) 2001-06-29 2005-04-12 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6933215B2 (en) 2001-06-29 2005-08-23 Atmel Germany Gmbh Process for doping a semiconductor body
US7064385B2 (en) 2003-09-19 2006-06-20 Atmel Germany Gmbh DMOS-transistor with lateral dopant gradient in drift region and method of producing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50151080A (en) * 1974-05-23 1975-12-04
JPS53147469A (en) * 1977-05-27 1978-12-22 Nippon Telegr & Teleph Corp <Ntt> Vertical field effect transistor and production of the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50151080A (en) * 1974-05-23 1975-12-04
JPS53147469A (en) * 1977-05-27 1978-12-22 Nippon Telegr & Teleph Corp <Ntt> Vertical field effect transistor and production of the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61501736A (en) * 1984-03-29 1986-08-14 ヒユ−ズ・エアクラフト・カンパニ− Latch-up resistant CMOS structure for VLSI
US6780713B2 (en) 2001-06-29 2004-08-24 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6806131B2 (en) 2001-06-29 2004-10-19 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6878603B2 (en) 2001-06-29 2005-04-12 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6933215B2 (en) 2001-06-29 2005-08-23 Atmel Germany Gmbh Process for doping a semiconductor body
US7064385B2 (en) 2003-09-19 2006-06-20 Atmel Germany Gmbh DMOS-transistor with lateral dopant gradient in drift region and method of producing the same

Also Published As

Publication number Publication date
JPS6253952B2 (en) 1987-11-12

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