JPS5518005A - Mos-type dynamic memory - Google Patents

Mos-type dynamic memory

Info

Publication number
JPS5518005A
JPS5518005A JP8997578A JP8997578A JPS5518005A JP S5518005 A JPS5518005 A JP S5518005A JP 8997578 A JP8997578 A JP 8997578A JP 8997578 A JP8997578 A JP 8997578A JP S5518005 A JPS5518005 A JP S5518005A
Authority
JP
Japan
Prior art keywords
substrate
region
mos
dynamic memory
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8997578A
Other languages
Japanese (ja)
Inventor
Toru Furuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8997578A priority Critical patent/JPS5518005A/en
Publication of JPS5518005A publication Critical patent/JPS5518005A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce noises and to make the size small by separating a memory circuit and other elements by providing an insulating layer to the depth of 1mum or more from the surface of a substrate. CONSTITUTION:Regions 1 and 2 are formed on a same substrate 9. A memory cell 3 is formed on the region 1; and a gate 4, a source 5, and a drain 6 are formed on the region 2. An insulating layer 7 is formed by ion implantation and the like so that it reaches the point sufficiently deep from the surface, thereby minority carriers which are generated in the substrate 9 and are capable of moving in the substrate 9 are prevented from moving into the region 1. In this constitution, noises are eliminated, holding characteristics can be enhanced accordingly, and the size can be reduced.
JP8997578A 1978-07-25 1978-07-25 Mos-type dynamic memory Pending JPS5518005A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8997578A JPS5518005A (en) 1978-07-25 1978-07-25 Mos-type dynamic memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8997578A JPS5518005A (en) 1978-07-25 1978-07-25 Mos-type dynamic memory

Publications (1)

Publication Number Publication Date
JPS5518005A true JPS5518005A (en) 1980-02-07

Family

ID=13985669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8997578A Pending JPS5518005A (en) 1978-07-25 1978-07-25 Mos-type dynamic memory

Country Status (1)

Country Link
JP (1) JPS5518005A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135959A (en) * 1980-03-28 1981-10-23 Nec Corp Semiconductor ic device
JPS58106858A (en) * 1981-12-18 1983-06-25 Nec Corp Semiconductor integrated circuit
JPS6074564A (en) * 1983-09-30 1985-04-26 Toshiba Corp Semiconductor memory device
JPH02354A (en) * 1989-02-08 1990-01-05 Hitachi Ltd Large scale semiconductor memory and its manufacture

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135959A (en) * 1980-03-28 1981-10-23 Nec Corp Semiconductor ic device
JPS58106858A (en) * 1981-12-18 1983-06-25 Nec Corp Semiconductor integrated circuit
JPS6074564A (en) * 1983-09-30 1985-04-26 Toshiba Corp Semiconductor memory device
JPH02354A (en) * 1989-02-08 1990-01-05 Hitachi Ltd Large scale semiconductor memory and its manufacture
JPH0426788B2 (en) * 1989-02-08 1992-05-08 Hitachi Ltd

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