JPS5662333A - Mos type semiconductor memory device and production thereof - Google Patents

Mos type semiconductor memory device and production thereof

Info

Publication number
JPS5662333A
JPS5662333A JP13839279A JP13839279A JPS5662333A JP S5662333 A JPS5662333 A JP S5662333A JP 13839279 A JP13839279 A JP 13839279A JP 13839279 A JP13839279 A JP 13839279A JP S5662333 A JPS5662333 A JP S5662333A
Authority
JP
Japan
Prior art keywords
substrate
memory cell
oxide film
section
inclination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13839279A
Other languages
Japanese (ja)
Inventor
Junichi Matsunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13839279A priority Critical patent/JPS5662333A/en
Publication of JPS5662333A publication Critical patent/JPS5662333A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76267—Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques

Abstract

PURPOSE:To improve the memory retaining property of a memory cell by providing a buried insulator layer for electrically separating a memory cell array section from a peripheral circuit section in such a manner that the end thereof is positioned on the surface of a substrate corresponding to a field region. CONSTITUTION:A silicon oxide film 11 is formed on the surface of a substrate 1. Then, a resist film 12 having a window is provided at a memory cell array section and a window is etched away in the oxide film 11. At this point, the open end section of the oxide film 11 is given an inclination of about 45 deg., for instance. With the oxide film 11 having such an inclination as an ion implantation mask, oxygen is implanted. Subsequently, heat treatment is made to convert the ion implanted layer into a buried insulator layer 3 whereby a construction is obtained to separate the substrate 12 of the memory cell accurately from the substrate 1 in a peripheral circuit section. Thereafter, a MOS device necessary for each substrate area is formed to complete a dynamic RAM.
JP13839279A 1979-10-26 1979-10-26 Mos type semiconductor memory device and production thereof Pending JPS5662333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13839279A JPS5662333A (en) 1979-10-26 1979-10-26 Mos type semiconductor memory device and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13839279A JPS5662333A (en) 1979-10-26 1979-10-26 Mos type semiconductor memory device and production thereof

Publications (1)

Publication Number Publication Date
JPS5662333A true JPS5662333A (en) 1981-05-28

Family

ID=15220862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13839279A Pending JPS5662333A (en) 1979-10-26 1979-10-26 Mos type semiconductor memory device and production thereof

Country Status (1)

Country Link
JP (1) JPS5662333A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106858A (en) * 1981-12-18 1983-06-25 Nec Corp Semiconductor integrated circuit
JPS59181050A (en) * 1983-03-31 1984-10-15 Toshiba Corp Semiconductor device and manufacture thereof
JPS6072243A (en) * 1983-09-28 1985-04-24 Matsushita Electric Ind Co Ltd Semiconductor ic device
JPS6242556A (en) * 1985-08-20 1987-02-24 Matsushita Electronics Corp Manufacture of semiconductor device
JPS632350A (en) * 1986-06-20 1988-01-07 Fujitsu Ltd Manufacture of semiconductor device
JPH01251636A (en) * 1988-03-31 1989-10-06 Toshiba Corp Manufacture of dielectric isolation wafer
US7265017B2 (en) 2003-07-31 2007-09-04 Kabushiki Kaisha Toshiba Method for manufacturing partial SOI substrates
JP2010130027A (en) * 2008-12-01 2010-06-10 Samsung Electronics Co Ltd Semiconductor device, and method for manufacturing the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106858A (en) * 1981-12-18 1983-06-25 Nec Corp Semiconductor integrated circuit
JPS59181050A (en) * 1983-03-31 1984-10-15 Toshiba Corp Semiconductor device and manufacture thereof
JPH0526346B2 (en) * 1983-03-31 1993-04-15 Tokyo Shibaura Electric Co
JPS6072243A (en) * 1983-09-28 1985-04-24 Matsushita Electric Ind Co Ltd Semiconductor ic device
JPS6242556A (en) * 1985-08-20 1987-02-24 Matsushita Electronics Corp Manufacture of semiconductor device
JPS632350A (en) * 1986-06-20 1988-01-07 Fujitsu Ltd Manufacture of semiconductor device
JPH01251636A (en) * 1988-03-31 1989-10-06 Toshiba Corp Manufacture of dielectric isolation wafer
US7265017B2 (en) 2003-07-31 2007-09-04 Kabushiki Kaisha Toshiba Method for manufacturing partial SOI substrates
JP2010130027A (en) * 2008-12-01 2010-06-10 Samsung Electronics Co Ltd Semiconductor device, and method for manufacturing the same

Similar Documents

Publication Publication Date Title
JPS55138267A (en) Manufacture of semiconductor integrated circuit containing resistance element
JPS5696854A (en) Semiconductor memory device
JPS57196573A (en) Manufacture of mos type semiconductor device
JPS5662333A (en) Mos type semiconductor memory device and production thereof
JPH02122563A (en) Manufacture of semiconductor device
KR970067907A (en) Manufacturing Method of Semiconductor Device
JPS55121667A (en) Integrated circuit
JPS5559759A (en) Semiconductor device
JPS5370687A (en) Production of semiconductor device
JPS5769777A (en) Manufacture of charge transfer device
JPS57114282A (en) Non-volatile semiconductor memory
JPS5575238A (en) Method of fabricating semiconductor device
JPS5764965A (en) Semiconductor device
JPS55121680A (en) Manufacture of semiconductor device
JPS645066A (en) Manufacture of field effect transistor
JPS5617026A (en) Manufacture of semiconductor device
JPS5541783A (en) Semiconductor device and method of manufacturing the same
JPS57202773A (en) Silicon integrated circuit device
JPS57153462A (en) Manufacture of semiconductor integrated circuit device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS5552262A (en) Mos semiconductor device
JPS5660060A (en) Mos semiconductor device
JPS57188866A (en) Manufacture of semiconductor device
JPS54143076A (en) Semiconductor device and its manufacture
JPS5518048A (en) Method of fabricating charge transfer type semiconductor device