JPS645066A - Manufacture of field effect transistor - Google Patents
Manufacture of field effect transistorInfo
- Publication number
- JPS645066A JPS645066A JP16180887A JP16180887A JPS645066A JP S645066 A JPS645066 A JP S645066A JP 16180887 A JP16180887 A JP 16180887A JP 16180887 A JP16180887 A JP 16180887A JP S645066 A JPS645066 A JP S645066A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- region
- implanted
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form two types of impurity implanted regions by one ion implantation by a method wherein a resist mask covering a specific part is composed of a resist film formed by spin-coating and impurity ions are implanted with an energy high enough to pierce through the mask. CONSTITUTION:After a gate oxide film 12 is formed in an element forming region A isolated and defined by a field oxide film 11 on the surface of a P-type silicon substrate 10, a polycrystalline silicon gate electrode 13 is formed on about the center part of the film 12. Then, a resist film 14 is formed on the surface of the substrate 10 by spin-coating and the resist film 14 on the film 11 and on the region of the film 12 close to the film 11 is removed by etching to form a mask 15. Then, impurity ions are implanted by using the electrode 13 and the mask 15 as a mask with an energy high enough to pierce through the mask 15 to form a region 16 which has a deep junction depth and a high impurity concentration and a region 17 which has a shallow junction depth and a low impurity concentration simultaneously.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16180887A JPS645066A (en) | 1987-06-29 | 1987-06-29 | Manufacture of field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16180887A JPS645066A (en) | 1987-06-29 | 1987-06-29 | Manufacture of field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS645066A true JPS645066A (en) | 1989-01-10 |
Family
ID=15742306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16180887A Pending JPS645066A (en) | 1987-06-29 | 1987-06-29 | Manufacture of field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS645066A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129632A (en) * | 2003-10-22 | 2005-05-19 | National Institute Of Advanced Industrial & Technology | Method for manufacturing mosfet semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60200572A (en) * | 1984-03-26 | 1985-10-11 | Hitachi Ltd | Manufacture of semiconductor device |
JPS61267368A (en) * | 1985-05-21 | 1986-11-26 | Fujitsu Ltd | Manufacture of misfet |
-
1987
- 1987-06-29 JP JP16180887A patent/JPS645066A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60200572A (en) * | 1984-03-26 | 1985-10-11 | Hitachi Ltd | Manufacture of semiconductor device |
JPS61267368A (en) * | 1985-05-21 | 1986-11-26 | Fujitsu Ltd | Manufacture of misfet |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129632A (en) * | 2003-10-22 | 2005-05-19 | National Institute Of Advanced Industrial & Technology | Method for manufacturing mosfet semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4771014A (en) | Process for manufacturing LDD CMOS devices | |
JPS57196573A (en) | Manufacture of mos type semiconductor device | |
JPS5662333A (en) | Mos type semiconductor memory device and production thereof | |
JPS645066A (en) | Manufacture of field effect transistor | |
JPS57159066A (en) | Manufacture of semiconductor device | |
JPS56107552A (en) | Manufacture of semiconductor device | |
JPS55154769A (en) | Manufacture of semiconductor device | |
JPS5783059A (en) | Manufacture of mos type semiconductor device | |
JPS55107229A (en) | Method of manufacturing semiconductor device | |
JPS645068A (en) | Manufacture of semiconductor device | |
JPS572579A (en) | Manufacture of junction type field effect transistor | |
JPS57153462A (en) | Manufacture of semiconductor integrated circuit device | |
JPS55121680A (en) | Manufacture of semiconductor device | |
JPS57136358A (en) | Integrated circuit device and manufacture thereof | |
JPS56104470A (en) | Semiconductor device and manufacture thereof | |
JPS5580361A (en) | Production of vertical junction gate type field effect transistor | |
JPS5613772A (en) | Preparation of semiconductor device | |
JPS561572A (en) | Manufacture of semiconductor device | |
JPS6477931A (en) | Manufacture of semiconductor device | |
JPS6481355A (en) | Manufacture of semiconductor device | |
JPS5615077A (en) | Manufacture of semiconductor device | |
JPS6468975A (en) | Manufacture of junction fet | |
JPS52146568A (en) | Production of silicon gate mos type semiconductor integrated circuit device | |
JPS5530866A (en) | Semiconductor device | |
JPS6446967A (en) | Manufacture of semiconductor device |