JPS645066A - Manufacture of field effect transistor - Google Patents

Manufacture of field effect transistor

Info

Publication number
JPS645066A
JPS645066A JP16180887A JP16180887A JPS645066A JP S645066 A JPS645066 A JP S645066A JP 16180887 A JP16180887 A JP 16180887A JP 16180887 A JP16180887 A JP 16180887A JP S645066 A JPS645066 A JP S645066A
Authority
JP
Japan
Prior art keywords
film
mask
region
implanted
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16180887A
Other languages
Japanese (ja)
Inventor
Noriyuki Shimoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP16180887A priority Critical patent/JPS645066A/en
Publication of JPS645066A publication Critical patent/JPS645066A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form two types of impurity implanted regions by one ion implantation by a method wherein a resist mask covering a specific part is composed of a resist film formed by spin-coating and impurity ions are implanted with an energy high enough to pierce through the mask. CONSTITUTION:After a gate oxide film 12 is formed in an element forming region A isolated and defined by a field oxide film 11 on the surface of a P-type silicon substrate 10, a polycrystalline silicon gate electrode 13 is formed on about the center part of the film 12. Then, a resist film 14 is formed on the surface of the substrate 10 by spin-coating and the resist film 14 on the film 11 and on the region of the film 12 close to the film 11 is removed by etching to form a mask 15. Then, impurity ions are implanted by using the electrode 13 and the mask 15 as a mask with an energy high enough to pierce through the mask 15 to form a region 16 which has a deep junction depth and a high impurity concentration and a region 17 which has a shallow junction depth and a low impurity concentration simultaneously.
JP16180887A 1987-06-29 1987-06-29 Manufacture of field effect transistor Pending JPS645066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16180887A JPS645066A (en) 1987-06-29 1987-06-29 Manufacture of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16180887A JPS645066A (en) 1987-06-29 1987-06-29 Manufacture of field effect transistor

Publications (1)

Publication Number Publication Date
JPS645066A true JPS645066A (en) 1989-01-10

Family

ID=15742306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16180887A Pending JPS645066A (en) 1987-06-29 1987-06-29 Manufacture of field effect transistor

Country Status (1)

Country Link
JP (1) JPS645066A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005129632A (en) * 2003-10-22 2005-05-19 National Institute Of Advanced Industrial & Technology Method for manufacturing mosfet semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60200572A (en) * 1984-03-26 1985-10-11 Hitachi Ltd Manufacture of semiconductor device
JPS61267368A (en) * 1985-05-21 1986-11-26 Fujitsu Ltd Manufacture of misfet

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60200572A (en) * 1984-03-26 1985-10-11 Hitachi Ltd Manufacture of semiconductor device
JPS61267368A (en) * 1985-05-21 1986-11-26 Fujitsu Ltd Manufacture of misfet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005129632A (en) * 2003-10-22 2005-05-19 National Institute Of Advanced Industrial & Technology Method for manufacturing mosfet semiconductor device

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