JPS5371577A - Nonvalatile semiconductor memory device - Google Patents

Nonvalatile semiconductor memory device

Info

Publication number
JPS5371577A
JPS5371577A JP14803576A JP14803576A JPS5371577A JP S5371577 A JPS5371577 A JP S5371577A JP 14803576 A JP14803576 A JP 14803576A JP 14803576 A JP14803576 A JP 14803576A JP S5371577 A JPS5371577 A JP S5371577A
Authority
JP
Japan
Prior art keywords
nonvalatile
memory device
semiconductor memory
region
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14803576A
Other languages
Japanese (ja)
Inventor
Shuichi Oya
Masanori Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14803576A priority Critical patent/JPS5371577A/en
Publication of JPS5371577A publication Critical patent/JPS5371577A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Abstract

PURPOSE:The high impurity density region of the same conduction type as the substrate is provided in contact with the drain, and on the region except the region which becomes a substantial channel between it and the drain, write low dielectric-strength PN junction is formed; and further, a floating gate electrode is made to expand onto the write PN junction, thereby making the length of the channel short.
JP14803576A 1976-12-08 1976-12-08 Nonvalatile semiconductor memory device Pending JPS5371577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14803576A JPS5371577A (en) 1976-12-08 1976-12-08 Nonvalatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14803576A JPS5371577A (en) 1976-12-08 1976-12-08 Nonvalatile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5371577A true JPS5371577A (en) 1978-06-26

Family

ID=15443650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14803576A Pending JPS5371577A (en) 1976-12-08 1976-12-08 Nonvalatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5371577A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117279A (en) * 1981-01-13 1982-07-21 Nec Corp Non volatile semiconductor memory unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117279A (en) * 1981-01-13 1982-07-21 Nec Corp Non volatile semiconductor memory unit
JPH0127598B2 (en) * 1981-01-13 1989-05-30 Nippon Electric Co

Similar Documents

Publication Publication Date Title
JPS5279679A (en) Semiconductor memory device
JPS5290273A (en) Semiconductor device
JPS5791561A (en) Semiconductor non-volatile memory device and manufacture therefor
JPS5371577A (en) Nonvalatile semiconductor memory device
JPS52131478A (en) Semiconductor device
JPS5228277A (en) Non-voltatile semiconductor memory device
JPS5263686A (en) Non-voltatile semiconductor memory device
JPS52146569A (en) Semiconductor memory device
JPS53112687A (en) Semiconductor device
JPS5422785A (en) Mis-type semiconductor memory device and its manufacture
JPS53138684A (en) Semiconductor memory device
JPS57162370A (en) Mos semiconductor memory device
JPS5350985A (en) Semiconductor memory device
JPS56126970A (en) Mos field effect transistor and manufacture thereof
JPS538581A (en) Semiconductor memory unit
JPS52147983A (en) Insulation gate type semiconductor device
JPS57162371A (en) Mos semiconductor memory device
JPS52123179A (en) Mos type semiconductor device and its production
JPS5353980A (en) Semiconductor device
JPS52103976A (en) Semiconductor integrated circuit
JPS56115572A (en) Field effect transistor
JPS54107269A (en) Non-volatile semiconductor memory and its production
JPS5394776A (en) Nonvolatile semiconductor memory device
JPS57103362A (en) Field effect transistor
JPS556848A (en) Semiconductor device