JPS53138684A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS53138684A JPS53138684A JP5349677A JP5349677A JPS53138684A JP S53138684 A JPS53138684 A JP S53138684A JP 5349677 A JP5349677 A JP 5349677A JP 5349677 A JP5349677 A JP 5349677A JP S53138684 A JPS53138684 A JP S53138684A
- Authority
- JP
- Japan
- Prior art keywords
- memory device
- semiconductor memory
- conductivity type
- substrate
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5349677A JPS53138684A (en) | 1977-05-10 | 1977-05-10 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5349677A JPS53138684A (en) | 1977-05-10 | 1977-05-10 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53138684A true JPS53138684A (en) | 1978-12-04 |
Family
ID=12944431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5349677A Pending JPS53138684A (en) | 1977-05-10 | 1977-05-10 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53138684A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0457369A (en) * | 1990-06-27 | 1992-02-25 | Toshiba Corp | Semiconductor integrated circuit |
US6084262A (en) * | 1999-08-19 | 2000-07-04 | Worldwide Semiconductor Mfg | Etox cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current |
-
1977
- 1977-05-10 JP JP5349677A patent/JPS53138684A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0457369A (en) * | 1990-06-27 | 1992-02-25 | Toshiba Corp | Semiconductor integrated circuit |
US6084262A (en) * | 1999-08-19 | 2000-07-04 | Worldwide Semiconductor Mfg | Etox cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050726 |
|
A601 | Written request for extension of time |
Effective date: 20051026 Free format text: JAPANESE INTERMEDIATE CODE: A601 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20051212 |
|
A313 | Final decision of rejection without a dissenting response from the applicant |
Effective date: 20060313 Free format text: JAPANESE INTERMEDIATE CODE: A313 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20060418 |