JPS53138684A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS53138684A
JPS53138684A JP5349677A JP5349677A JPS53138684A JP S53138684 A JPS53138684 A JP S53138684A JP 5349677 A JP5349677 A JP 5349677A JP 5349677 A JP5349677 A JP 5349677A JP S53138684 A JPS53138684 A JP S53138684A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
conductivity type
substrate
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5349677A
Other languages
Japanese (ja)
Inventor
Osamu Inoue
Tamotsu Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5349677A priority Critical patent/JPS53138684A/en
Publication of JPS53138684A publication Critical patent/JPS53138684A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To improve characteristics such as write voltage and read time by so forming the semiconductor device that source and drain regions of opposite conductivity type are formed on a semiconductor substrate of one conductivity type, a floating gate is provided on the substrate between these and an emitter is formed within the drain region.
JP5349677A 1977-05-10 1977-05-10 Semiconductor memory device Pending JPS53138684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5349677A JPS53138684A (en) 1977-05-10 1977-05-10 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5349677A JPS53138684A (en) 1977-05-10 1977-05-10 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS53138684A true JPS53138684A (en) 1978-12-04

Family

ID=12944431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5349677A Pending JPS53138684A (en) 1977-05-10 1977-05-10 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS53138684A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0457369A (en) * 1990-06-27 1992-02-25 Toshiba Corp Semiconductor integrated circuit
US6084262A (en) * 1999-08-19 2000-07-04 Worldwide Semiconductor Mfg Etox cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0457369A (en) * 1990-06-27 1992-02-25 Toshiba Corp Semiconductor integrated circuit
US6084262A (en) * 1999-08-19 2000-07-04 Worldwide Semiconductor Mfg Etox cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current

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