JPS52130290A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS52130290A JPS52130290A JP4737676A JP4737676A JPS52130290A JP S52130290 A JPS52130290 A JP S52130290A JP 4737676 A JP4737676 A JP 4737676A JP 4737676 A JP4737676 A JP 4737676A JP S52130290 A JPS52130290 A JP S52130290A
- Authority
- JP
- Japan
- Prior art keywords
- memory device
- semiconductor memory
- regions
- extend
- extends
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To lower writing voltage by so forming an n<-> conductive layer that it does not extend from source regions and extends to gate regions from drain regions only in a semiconductor memory device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4737676A JPS52130290A (en) | 1976-04-26 | 1976-04-26 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4737676A JPS52130290A (en) | 1976-04-26 | 1976-04-26 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52130290A true JPS52130290A (en) | 1977-11-01 |
Family
ID=12773368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4737676A Pending JPS52130290A (en) | 1976-04-26 | 1976-04-26 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52130290A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6124282A (en) * | 1984-07-13 | 1986-02-01 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1976
- 1976-04-26 JP JP4737676A patent/JPS52130290A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6124282A (en) * | 1984-07-13 | 1986-02-01 | Hitachi Ltd | Semiconductor integrated circuit device |
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