JPS52130290A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS52130290A
JPS52130290A JP4737676A JP4737676A JPS52130290A JP S52130290 A JPS52130290 A JP S52130290A JP 4737676 A JP4737676 A JP 4737676A JP 4737676 A JP4737676 A JP 4737676A JP S52130290 A JPS52130290 A JP S52130290A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
regions
extend
extends
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4737676A
Other languages
Japanese (ja)
Inventor
Shigeharu Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4737676A priority Critical patent/JPS52130290A/en
Publication of JPS52130290A publication Critical patent/JPS52130290A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To lower writing voltage by so forming an n<-> conductive layer that it does not extend from source regions and extends to gate regions from drain regions only in a semiconductor memory device.
JP4737676A 1976-04-26 1976-04-26 Semiconductor memory device Pending JPS52130290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4737676A JPS52130290A (en) 1976-04-26 1976-04-26 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4737676A JPS52130290A (en) 1976-04-26 1976-04-26 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS52130290A true JPS52130290A (en) 1977-11-01

Family

ID=12773368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4737676A Pending JPS52130290A (en) 1976-04-26 1976-04-26 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS52130290A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6124282A (en) * 1984-07-13 1986-02-01 Hitachi Ltd Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6124282A (en) * 1984-07-13 1986-02-01 Hitachi Ltd Semiconductor integrated circuit device

Similar Documents

Publication Publication Date Title
JPS5279679A (en) Semiconductor memory device
JPS52106280A (en) Semiconductor transistor memory cell
JPS52101967A (en) Semiconductor device
JPS53108392A (en) Semiconductor device
JPS5228277A (en) Non-voltatile semiconductor memory device
JPS52130290A (en) Semiconductor memory device
JPS5263684A (en) Non-volatile semiconductor memory device
JPS5787177A (en) Semiconductor memory device
JPS5429985A (en) Semiconductor nonvolatile memory device
JPS53112687A (en) Semiconductor device
JPS5263686A (en) Non-voltatile semiconductor memory device
JPS52103974A (en) Semicondcutor integrated circuit device
JPS5292441A (en) Semiconductor memory unit
JPS5422785A (en) Mis-type semiconductor memory device and its manufacture
JPS52115669A (en) Semiconductor memory device
JPS53138684A (en) Semiconductor memory device
JPS5350985A (en) Semiconductor memory device
JPS5377476A (en) Semiconductor integrated circuit device
JPS52149988A (en) Semiconductor device
JPS5297680A (en) Production of mis type semiconductor integrated circuit device
JPS52130580A (en) High densityintegrated circuit device
JPS5368066A (en) Semiconductor switch
JPS53985A (en) Semiconductor device
JPS5371573A (en) Field effect transistor of isolating gate type
JPS538581A (en) Semiconductor memory unit