JPS5263684A - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
JPS5263684A
JPS5263684A JP13958975A JP13958975A JPS5263684A JP S5263684 A JPS5263684 A JP S5263684A JP 13958975 A JP13958975 A JP 13958975A JP 13958975 A JP13958975 A JP 13958975A JP S5263684 A JPS5263684 A JP S5263684A
Authority
JP
Japan
Prior art keywords
memory device
gate
semiconductor memory
volatile semiconductor
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13958975A
Other languages
Japanese (ja)
Other versions
JPS5528555B2 (en
Inventor
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13958975A priority Critical patent/JPS5263684A/en
Publication of JPS5263684A publication Critical patent/JPS5263684A/en
Publication of JPS5528555B2 publication Critical patent/JPS5528555B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:A transistor having memory and address selecting gate is obtained by providing a control gate at a part of regions via first gate insulating film on the surfcce of channel regions and further providing a floating gate extended to the portions not covered with the control gate via second gate insulating film thereon.
JP13958975A 1975-11-20 1975-11-20 Non-volatile semiconductor memory device Granted JPS5263684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13958975A JPS5263684A (en) 1975-11-20 1975-11-20 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13958975A JPS5263684A (en) 1975-11-20 1975-11-20 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5263684A true JPS5263684A (en) 1977-05-26
JPS5528555B2 JPS5528555B2 (en) 1980-07-29

Family

ID=15248775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13958975A Granted JPS5263684A (en) 1975-11-20 1975-11-20 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5263684A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2572211A1 (en) * 1984-10-23 1986-04-25 Sgs Microelettronica Spa PERMANENT MEMORY CELL OF THE "MERGED" TYPE (FUSIONED) WITH A FLOATING GRID SUPERMITTED TO THE CONTROL AND SELECTION GRID
JPS6266681A (en) * 1985-09-19 1987-03-26 Fujitsu Ltd Semiconductor memory cell and manufacture thereof
US4795719A (en) * 1984-05-15 1989-01-03 Waferscale Integration, Inc. Self-aligned split gate eprom process
US4868629A (en) * 1984-05-15 1989-09-19 Waferscale Integration, Inc. Self-aligned split gate EPROM
US5021847A (en) * 1984-05-15 1991-06-04 Waferscale Integration, Inc. Split gate memory array having staggered floating gate rows and method for making same
US5293328A (en) * 1992-01-15 1994-03-08 National Semiconductor Corporation Electrically reprogrammable EPROM cell with merged transistor and optiumum area
JPH0964208A (en) * 1995-08-25 1997-03-07 Nec Corp Nonvolatile semiconductor memory device and manufacture thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795719A (en) * 1984-05-15 1989-01-03 Waferscale Integration, Inc. Self-aligned split gate eprom process
US4868629A (en) * 1984-05-15 1989-09-19 Waferscale Integration, Inc. Self-aligned split gate EPROM
US5021847A (en) * 1984-05-15 1991-06-04 Waferscale Integration, Inc. Split gate memory array having staggered floating gate rows and method for making same
FR2572211A1 (en) * 1984-10-23 1986-04-25 Sgs Microelettronica Spa PERMANENT MEMORY CELL OF THE "MERGED" TYPE (FUSIONED) WITH A FLOATING GRID SUPERMITTED TO THE CONTROL AND SELECTION GRID
JPS6266681A (en) * 1985-09-19 1987-03-26 Fujitsu Ltd Semiconductor memory cell and manufacture thereof
US5293328A (en) * 1992-01-15 1994-03-08 National Semiconductor Corporation Electrically reprogrammable EPROM cell with merged transistor and optiumum area
JPH0964208A (en) * 1995-08-25 1997-03-07 Nec Corp Nonvolatile semiconductor memory device and manufacture thereof

Also Published As

Publication number Publication date
JPS5528555B2 (en) 1980-07-29

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