JPS5466781A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5466781A
JPS5466781A JP13306477A JP13306477A JPS5466781A JP S5466781 A JPS5466781 A JP S5466781A JP 13306477 A JP13306477 A JP 13306477A JP 13306477 A JP13306477 A JP 13306477A JP S5466781 A JPS5466781 A JP S5466781A
Authority
JP
Japan
Prior art keywords
substrate
control gate
drain region
floating gate
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13306477A
Other languages
Japanese (ja)
Inventor
Masashi Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13306477A priority Critical patent/JPS5466781A/en
Publication of JPS5466781A publication Critical patent/JPS5466781A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To speed up the readout speed, by providing the floating gate and control gate on the substrate between source and drain region formed in semiconductor substrate via the insulation film. CONSTITUTION:The source and drain region is formed in the semiconductor substrate with isolation, the insulation film being the memory region is coated on the substrate between the regions, and floating gate FG and control gate CG are coated on it. With this constitution, with the presence of the charge stored in the memory region, the destruction and non destruction control voltage between the drain region and the substrate is fed to the control gate CG, and readout operation is made. Or, it can be constituted with the substrate 51, diode 52, floating gate 53, and control gate 54, and thus, the readout speed is quickened and the circuit integration is made greater.
JP13306477A 1977-11-08 1977-11-08 Semiconductor memory unit Pending JPS5466781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13306477A JPS5466781A (en) 1977-11-08 1977-11-08 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13306477A JPS5466781A (en) 1977-11-08 1977-11-08 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS5466781A true JPS5466781A (en) 1979-05-29

Family

ID=15095980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13306477A Pending JPS5466781A (en) 1977-11-08 1977-11-08 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5466781A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3223571C1 (en) * 1982-06-24 1983-12-22 Standard Elektrik Lorenz Ag, 7000 Stuttgart Electrophotographic recording material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3223571C1 (en) * 1982-06-24 1983-12-22 Standard Elektrik Lorenz Ag, 7000 Stuttgart Electrophotographic recording material

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