JPS52106275A - Floating type nonvoltile semiconductor memory element - Google Patents

Floating type nonvoltile semiconductor memory element

Info

Publication number
JPS52106275A
JPS52106275A JP2225876A JP2225876A JPS52106275A JP S52106275 A JPS52106275 A JP S52106275A JP 2225876 A JP2225876 A JP 2225876A JP 2225876 A JP2225876 A JP 2225876A JP S52106275 A JPS52106275 A JP S52106275A
Authority
JP
Japan
Prior art keywords
nonvoltile
semiconductor memory
memory element
floating type
erasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2225876A
Other languages
Japanese (ja)
Inventor
Hisaaki Aizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2225876A priority Critical patent/JPS52106275A/en
Publication of JPS52106275A publication Critical patent/JPS52106275A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To secure writing and erasing through application of comparatively low voltage of unipolarity by installing writing and erasing gates separately and by controlling electric field between floating gate and semiconductor substrate.
JP2225876A 1976-03-03 1976-03-03 Floating type nonvoltile semiconductor memory element Pending JPS52106275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2225876A JPS52106275A (en) 1976-03-03 1976-03-03 Floating type nonvoltile semiconductor memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2225876A JPS52106275A (en) 1976-03-03 1976-03-03 Floating type nonvoltile semiconductor memory element

Publications (1)

Publication Number Publication Date
JPS52106275A true JPS52106275A (en) 1977-09-06

Family

ID=12077737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2225876A Pending JPS52106275A (en) 1976-03-03 1976-03-03 Floating type nonvoltile semiconductor memory element

Country Status (1)

Country Link
JP (1) JPS52106275A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5667973A (en) * 1979-10-26 1981-06-08 Texas Instruments Inc Semiconductor memory and method of manufacturing same
JPS57500398A (en) * 1980-03-17 1982-03-04
JPS5743470A (en) * 1980-08-29 1982-03-11 Fujitsu Ltd Semiconductor device
JPS5787165A (en) * 1980-11-20 1982-05-31 Toshiba Corp Semiconductor memory storage
JPS5787163A (en) * 1980-11-20 1982-05-31 Toshiba Corp Semiconductor memory storage
JPS5787164A (en) * 1980-11-20 1982-05-31 Toshiba Corp Manufacture of semiconductor memory storage

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5667973A (en) * 1979-10-26 1981-06-08 Texas Instruments Inc Semiconductor memory and method of manufacturing same
JPH0136273B2 (en) * 1979-10-26 1989-07-31 Texas Instruments Inc
JPS57500398A (en) * 1980-03-17 1982-03-04
JPS5743470A (en) * 1980-08-29 1982-03-11 Fujitsu Ltd Semiconductor device
JPS5787165A (en) * 1980-11-20 1982-05-31 Toshiba Corp Semiconductor memory storage
JPS5787163A (en) * 1980-11-20 1982-05-31 Toshiba Corp Semiconductor memory storage
JPS5787164A (en) * 1980-11-20 1982-05-31 Toshiba Corp Manufacture of semiconductor memory storage
JPS6139753B2 (en) * 1980-11-20 1986-09-05 Tokyo Shibaura Electric Co
JPS6139752B2 (en) * 1980-11-20 1986-09-05 Tokyo Shibaura Electric Co
JPS623991B2 (en) * 1980-11-20 1987-01-28 Tokyo Shibaura Electric Co

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