JPS52104078A - Semiconductor unit - Google Patents

Semiconductor unit

Info

Publication number
JPS52104078A
JPS52104078A JP1997676A JP1997676A JPS52104078A JP S52104078 A JPS52104078 A JP S52104078A JP 1997676 A JP1997676 A JP 1997676A JP 1997676 A JP1997676 A JP 1997676A JP S52104078 A JPS52104078 A JP S52104078A
Authority
JP
Japan
Prior art keywords
semiconductor unit
diode
floating gate
insulation film
erase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997676A
Other languages
Japanese (ja)
Inventor
Satoshi Meguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1997676A priority Critical patent/JPS52104078A/en
Publication of JPS52104078A publication Critical patent/JPS52104078A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Abstract

PURPOSE:To provide a non-volatile memory which can erase the written data by controlling the carrier injected from the diode through the insulation film and accumulated in the floating gate in a MIS transistor having an insulation film and PN diode on the floating gate electrode.
JP1997676A 1976-02-27 1976-02-27 Semiconductor unit Pending JPS52104078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1997676A JPS52104078A (en) 1976-02-27 1976-02-27 Semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1997676A JPS52104078A (en) 1976-02-27 1976-02-27 Semiconductor unit

Publications (1)

Publication Number Publication Date
JPS52104078A true JPS52104078A (en) 1977-09-01

Family

ID=12014208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1997676A Pending JPS52104078A (en) 1976-02-27 1976-02-27 Semiconductor unit

Country Status (1)

Country Link
JP (1) JPS52104078A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5759387A (en) * 1980-09-26 1982-04-09 Toshiba Corp Semiconductor storage device
EP0055557A2 (en) * 1980-12-29 1982-07-07 Fujitsu Limited Nonvolatile semiconductor memory device
JPS57164574A (en) * 1981-04-02 1982-10-09 Seiko Epson Corp Semiconductor memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5759387A (en) * 1980-09-26 1982-04-09 Toshiba Corp Semiconductor storage device
JPS6362113B2 (en) * 1980-09-26 1988-12-01
EP0055557A2 (en) * 1980-12-29 1982-07-07 Fujitsu Limited Nonvolatile semiconductor memory device
JPS57164574A (en) * 1981-04-02 1982-10-09 Seiko Epson Corp Semiconductor memory device

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