JPS5245287A - Semiconductor memory element - Google Patents

Semiconductor memory element

Info

Publication number
JPS5245287A
JPS5245287A JP8719676A JP8719676A JPS5245287A JP S5245287 A JPS5245287 A JP S5245287A JP 8719676 A JP8719676 A JP 8719676A JP 8719676 A JP8719676 A JP 8719676A JP S5245287 A JPS5245287 A JP S5245287A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory element
fet
tunnel effect
type writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8719676A
Other languages
Japanese (ja)
Other versions
JPS5319907B2 (en
Inventor
Yoshio Nishi
Isao Nojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8719676A priority Critical patent/JPS5245287A/en
Publication of JPS5245287A publication Critical patent/JPS5245287A/en
Publication of JPS5319907B2 publication Critical patent/JPS5319907B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:A semiconductor memory constructed from FET which has the gate construction of MIOS type writing O by the avalanche injection and 1 by the tunnel effect.
JP8719676A 1976-07-23 1976-07-23 Semiconductor memory element Granted JPS5245287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8719676A JPS5245287A (en) 1976-07-23 1976-07-23 Semiconductor memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8719676A JPS5245287A (en) 1976-07-23 1976-07-23 Semiconductor memory element

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP7986571A Division JPS5149380B2 (en) 1971-10-12 1971-10-12

Publications (2)

Publication Number Publication Date
JPS5245287A true JPS5245287A (en) 1977-04-09
JPS5319907B2 JPS5319907B2 (en) 1978-06-23

Family

ID=13908217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8719676A Granted JPS5245287A (en) 1976-07-23 1976-07-23 Semiconductor memory element

Country Status (1)

Country Link
JP (1) JPS5245287A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4020998A1 (en) * 1990-07-02 1992-01-16 Gkn Automotive Ag DRIVE SHAFT

Also Published As

Publication number Publication date
JPS5319907B2 (en) 1978-06-23

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