JPS5798192A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5798192A
JPS5798192A JP17291780A JP17291780A JPS5798192A JP S5798192 A JPS5798192 A JP S5798192A JP 17291780 A JP17291780 A JP 17291780A JP 17291780 A JP17291780 A JP 17291780A JP S5798192 A JPS5798192 A JP S5798192A
Authority
JP
Japan
Prior art keywords
line
gate
erase
cell
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17291780A
Other languages
Japanese (ja)
Other versions
JPS623995B2 (en
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17291780A priority Critical patent/JPS5798192A/en
Priority to EP81305348A priority patent/EP0054355B1/en
Priority to DE8181305348T priority patent/DE3174417D1/en
Priority to US06/321,320 priority patent/US4437172A/en
Publication of JPS5798192A publication Critical patent/JPS5798192A/en
Publication of JPS623995B2 publication Critical patent/JPS623995B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors

Abstract

PURPOSE:To erase a data a every 1 bit, by constituting so that the potential of a line-line and an erase line of a selected cell of a matrix whose memory cell of 1 bit consists of one transistor is made a low level and a high level, respectively, when erasing a data. CONSTITUTION:A cell M11 consisting of a control gate CG provided through an insulating film on a semiconductor substrate, an erase gate EG providing in the insulating film between said gate and the substrate, a floating gate FG which is provided in parallel with the gate EG, and whose end part is overlapped with a part of the gate EG, a source S and a drain D is placed in the form of a matrix consisting of (i) rows and (j) lines, and gates CG and the gates EG are connected in common by the line-line and the erase line, respectively. For instance, when erasing a data of only a cell Mij, a line-line Pi is made a low level through a line decoder 42 and transistors Qi, TRPi, other line-line are made a high level, and an erase line E-j is made a high level through a row decoder 41, an inverter Ij and a transistor TREj.
JP17291780A 1980-12-08 1980-12-08 Semiconductor storage device Granted JPS5798192A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP17291780A JPS5798192A (en) 1980-12-08 1980-12-08 Semiconductor storage device
EP81305348A EP0054355B1 (en) 1980-12-08 1981-11-11 Semiconductor memory device
DE8181305348T DE3174417D1 (en) 1980-12-08 1981-11-11 Semiconductor memory device
US06/321,320 US4437172A (en) 1980-12-08 1981-11-13 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17291780A JPS5798192A (en) 1980-12-08 1980-12-08 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5798192A true JPS5798192A (en) 1982-06-18
JPS623995B2 JPS623995B2 (en) 1987-01-28

Family

ID=15950739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17291780A Granted JPS5798192A (en) 1980-12-08 1980-12-08 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5798192A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513901A (en) * 1978-07-17 1980-01-31 Hitachi Ltd Fixed memory of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513901A (en) * 1978-07-17 1980-01-31 Hitachi Ltd Fixed memory of semiconductor

Also Published As

Publication number Publication date
JPS623995B2 (en) 1987-01-28

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